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Titolo:
SEMIINSULATING LEC GAAS SUBSTRATES WITH AN IMPROVED MACROSCOPIC AND MESOSCOPIC HOMOGENEITY
Autore:
JURISCH M; FLADE T; HOFFMANN B; KOHLER A; KORB J; KRETZER U; REINHOLD T; WEINERT B;
Indirizzi:
FREIBERGER COMPOUND MAT GMBH FREIBERG GERMANY GTT TECHNOL FREIBERG GERMANY
Titolo Testata:
Materials science & engineering. B, Solid-state materials for advanced technology
fascicolo: 1-3, volume: 44, anno: 1997,
pagine: 198 - 202
SICI:
0921-5107(1997)44:1-3<198:SLGSWA>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
SCATTERING TOMOGRAPHY;
Keywords:
GALLIUM ARSENIDE; MACROSCOPIC AND MESOSCOPIC HOMOGENEITY; CRYSTAL INHOMOGENEITY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
15
Recensione:
Indirizzi per estratti:
Citazione:
M. Jurisch et al., "SEMIINSULATING LEC GAAS SUBSTRATES WITH AN IMPROVED MACROSCOPIC AND MESOSCOPIC HOMOGENEITY", Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 198-202

Abstract

A semi-quantitative understanding of the thermochemistry of boron oxide gettering ability and the influence of gas phase composition on theGaAs-melt in synthesis and growth allows LEG-growth of carbon controlled semi-insulating GaAs-crystals on a production scale. By optimization of thermal growth conditions and of a two-step post-growth ingot annealing procedure the scatter of electrical parameters among crystals has been significantly reduced and the homogeneity of individual crystals on a macroscopic and mesoscopic scale has been improved. (C) 1997 Published by Elsevier Science S.A.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 13/08/20 alle ore 14:33:53