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Titolo:
A VOLTAGE UNIFORMITY STUDY IN LARGE-AREA REACTORS FOR RF PLASMA DEPOSITION
Autore:
SANSONNENS L; PLETZER A; MAGNI D; HOWLING AA; HOLLENSTEIN C; SCHMITT JPM;
Indirizzi:
ECOLE POLYTECH FED LAUSANNE,PPH ECUBLENS,CTR RECH PHYS PLASMAS CH-1015 LAUSANNE SWITZERLAND BALZERS PROC SYST F-91120 PALAISEAU FRANCE
Titolo Testata:
Plasma sources science & technology
fascicolo: 2, volume: 6, anno: 1997,
pagine: 170 - 178
SICI:
0963-0252(1997)6:2<170:AVUSIL>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
EXCITATION-FREQUENCY; AMORPHOUS-SILICON; SILANE PLASMAS; GLOW-DISCHARGE; MHZ;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
22
Recensione:
Indirizzi per estratti:
Citazione:
L. Sansonnens et al., "A VOLTAGE UNIFORMITY STUDY IN LARGE-AREA REACTORS FOR RF PLASMA DEPOSITION", Plasma sources science & technology, 6(2), 1997, pp. 170-178

Abstract

Non-uniform voltage distribution across the electrode area results ininhomogeneous thin-film RF plasma deposition in large-area reactors. In this work, a two-dimensional analytic model for the calculation of the voltage distribution across the electrode area is presented. The results of this model are in good agreement with measurements performedwithout plasma at 13.56 MHz and 70 MHz in a large-area reactor. The principal voltage inhomogeneities are caused by logarithmic singularities in the vicinity of RF connections and not by standing waves. These singularities are only described by a two-dimensional model and cannotbe intuitively predicted by analogy to a one-dimensional case. Plasmalight emission measurements and thickness homogeneity studies of a-Si:H deposited films show that the plasma reproduces these voltage inhomogeneities. Improvement of the voltage uniformity is investigated by changing the number and position of the RF connections.

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Documento generato il 15/07/20 alle ore 15:02:49