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Titolo:
High throughput, high quality dry etching of copper/barrier film stacks
Autore:
Markert, M; Bertz, A; Gessner, T; Ye, Y; Zhao, A; Ma, D;
Indirizzi:
Chemnitz Univ Technol, Ctr Microtechnol, D-09107 Chemnitz, Germany Chemnitz Univ Technol Chemnitz Germany D-09107 D-09107 Chemnitz, Germany Appl Mat Inc, Santa Clara, CA 95054 USA Appl Mat Inc Santa Clara CA USA 95054 Mat Inc, Santa Clara, CA 95054 USA
Titolo Testata:
MICROELECTRONIC ENGINEERING
fascicolo: 1-4, volume: 50, anno: 2000,
pagine: 417 - 423
SICI:
0167-9317(200001)50:1-4<417:HTHQDE>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
COPPER; RIE;
Keywords:
copper; dry etching; interconnect; metallization;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
8
Recensione:
Indirizzi per estratti:
Indirizzo: Markert, M Chemnitz Univ Technol, Ctr Microtechnol, D-09107 Chemnitz, Germany Chemnitz Univ Technol Chemnitz Germany D-09107 mnitz, Germany
Citazione:
M. Markert et al., "High throughput, high quality dry etching of copper/barrier film stacks", MICROEL ENG, 50(1-4), 2000, pp. 417-423

Abstract

Dry etching of copper interconnect lines in a chlorine-based plasma has been investigated. Copper dry etching was carried out in a modified diode-type reactive ion etch (RIE) system and in an inductively coupled plasma (ICP)etch system. The ICP system offers a significant increase in copper etch rate compared with the low-efficiency RIE system while maintaining excellentpattern transfer accuracy. A number of fundamental issues in high quality and high throughput copper dry etching will be discussed. Electrical characterization of patterned copper lines with line width as small as 0.25 mu m indicates low electrical resistivity and good electromigration performance. (C) 2000 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 09/07/20 alle ore 23:40:06