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Titolo:
A new chemical method for the preparation of Ag2S thin films
Autore:
Sankapal, BR; Mane, RS; Lokhande, CD;
Indirizzi:
Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra,India Shivaji Univ Kolhapur Maharashtra India 416004 416004, Maharashtra,India
Titolo Testata:
MATERIALS CHEMISTRY AND PHYSICS
fascicolo: 3, volume: 63, anno: 2000,
pagine: 226 - 229
SICI:
0254-0584(20000315)63:3<226:ANCMFT>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
IONIC-LAYER ADSORPTION; SOLUTION GROWTH; SILVER SULFIDE; ACIDIC BATH; CDS; ZNS;
Keywords:
Ag2S thin films; chemical method; structural; optical and electrical properties;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Lokhande, CD Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004,Maharashtra,India Shivaji Univ Kolhapur Maharashtra India 416004 rashtra,India
Citazione:
B.R. Sankapal et al., "A new chemical method for the preparation of Ag2S thin films", MATER CH PH, 63(3), 2000, pp. 226-229

Abstract

Semiconducting Ag2S thin films were deposited onto amorphous glass, and single crystalline wafer of Si (1 1 1) by using a new, simple and less expensive successive ionic layer adsorption and reaction (SILAR) chemical method. The XRD studies show that the crystallinity of Ag2S film depends on the type of substrate. The microstructural, optical and electrical properties of Ag2S films deposited onto glass substrate and subsequently annealed at various (373-573 K) temperatures in air were studied and results are reported. (C) 2000 Elsevier Science S.A. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 12/07/20 alle ore 05:57:14