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Titolo:
MOVPE growth of (Al,Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy
Autore:
Haberland, K; Bhattacharya, A; Zorn, M; Weyers, M; Zettler, JT; Richter, W;
Indirizzi:
Tech Univ Berlin, Inst Festkorperphys, Sekr PN 6 1, D-10623 Berlin, Germany Tech Univ Berlin Berlin Germany D-10623 PN 6 1, D-10623 Berlin, Germany Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany FerdinandBraun Inst Hochstfrequenztech Berlin Germany D-12489 , Germany
Titolo Testata:
JOURNAL OF ELECTRONIC MATERIALS
fascicolo: 1, volume: 29, anno: 2000,
pagine: 94 - 98
SICI:
0361-5235(200001)29:1<94:MGO(LS>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
DIFFERENCE SPECTROSCOPY; ELLIPSOMETRY;
Keywords:
reflectance anisotropy spectroscopy (RAS); metal organic vapor phase epitaxy (MOVPE); optical in-situ spectroscopy; real-time monitoring; semiconductor laser;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Haberland, K Tech Univ Berlin, Inst Festkorperphys, Sekr PN 6 1, Hardenbergstr 36, D-10623 Berlin, Germany Tech Univ Berlin Hardenbergstr 36 Berlin Germany D-10623 any
Citazione:
K. Haberland et al., "MOVPE growth of (Al,Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy", J ELEC MAT, 29(1), 2000, pp. 94-98

Abstract

Using a specially-designed spectrometer enabling combined reflectance anisotropy spectroscopy (IRAS) and reflectance measurements on rotating substrates in a commercial MOVPE reactor, we report the first full-spectroscopic RAS-monitoring of(Al,Ga)InP-based 650 nm laser growth. First, a spectral database was built up from systematic studies of AlGaInP RAS signatures for different Al compositions, doping levels and growth temperatures. These data are subsequently used for the interpretation of characteristic RAS fingerprints taken throughout the entire laser growth process. From the analysis ofcharacteristic changes in the RAS spectra even small deviations from the optimum process (doping levels, composition, etc.) which would effect the performance of the final device can be detected.

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Documento generato il 26/01/21 alle ore 04:32:13