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Titolo:
Nonlinear amplitude evolution during spontaneous patterning of ion-bombarded Si(001)
Autore:
Erlebacher, J; Aziz, MJ; Chason, E; Sinclair, MB; Floro, JA;
Indirizzi:
Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA Harvard Univ Cambridge MA USA 02138 n & Appl Sci, Cambridge, MA 02138 USA Sandia Natl Labs, Albuquerque, NM 87185 USA Sandia Natl Labs Albuquerque NM USA 87185 Labs, Albuquerque, NM 87185 USA
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
fascicolo: 1, volume: 18, anno: 2000,
pagine: 115 - 120
SICI:
0734-2101(200001/02)18:1<115:NAEDSP>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
MORPHOLOGICAL EQUILIBRATION; ROUGHENING INSTABILITY; VICINAL SURFACES; THIN-FILMS; SI; DIFFUSION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
24
Recensione:
Indirizzi per estratti:
Indirizzo: Erlebacher, J Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA Harvard Univ Cambridge MA USA 02138 Cambridge, MA 02138 USA
Citazione:
J. Erlebacher et al., "Nonlinear amplitude evolution during spontaneous patterning of ion-bombarded Si(001)", J VAC SCI A, 18(1), 2000, pp. 115-120

Abstract

The time evolution of the amplitude of periodic nanoscale ripple patterns formed on Ar+ sputtered Si(001) surfaces was examined using a recently developed in situ spectroscopic technique. At sufficiently long times, we find that the amplitude does not continue to grow exponentially as predicted by the standard Bradley-Harper sputter rippling model. In accounting for this discrepancy, we rule out effects related to the concentration of mobile species, high surface curvature, surface energy anisotropy, and ion-surface interactions. We observe that for all wavelengths the amplitude ceases to grow when the width of the topmost terrace of the ripples is reduced to approximately 25 nm. This observation suggests that a short circuit relaxation mechanism limits amplitude growth. A strategy for influencing the ultimate ripple amplitude is discussed. (C) 2000 American Vacuum Society. [S0734-2101(00)01001-0].

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Documento generato il 03/12/20 alle ore 12:43:10