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Titolo:
Dynamic study of the surfaces of (001) gallium arsenide in metal-organic vapor-phase epitaxy during arsenic desorption
Autore:
Pristovsek, M; Trepk, T; Klein, M; Zettler, JT; Richter, W;
Indirizzi:
Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany Tech Univ Berlin Berlin Germany D-10623 perphys, D-10623 Berlin, Germany
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 3, volume: 87, anno: 2000,
pagine: 1245 - 1250
SICI:
0021-8979(20000201)87:3<1245:DSOTSO>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
REFLECTANCE-DIFFERENCE SPECTROSCOPY; ANISOTROPY OSCILLATIONS; VICINAL GAAS(001); GAAS-SURFACES; MBE GROWTH; RECONSTRUCTIONS; DEPOSITION; ARSINE; C(4X4);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
20
Recensione:
Indirizzi per estratti:
Indirizzo: Pristovsek, M Tech Univ Berlin, Inst Festkorperphys, PN6-1,Hardenbergstr 36, D-10623 Berlin, Germany Tech Univ Berlin PN6-1,Hardenbergstr 36 Berlin Germany D-10623
Citazione:
M. Pristovsek et al., "Dynamic study of the surfaces of (001) gallium arsenide in metal-organic vapor-phase epitaxy during arsenic desorption", J APPL PHYS, 87(3), 2000, pp. 1245-1250

Abstract

We have investigated by reflectance anisotropy spectroscopy the arsenic desorption from GaAs (001) at various temperatures in metal-organic vapor-phase epitaxy to obtain reaction orders and activation energies. The highest arsenic coverage, found at low temperatures with arsine stabilization, corresponds to a (4 x 3) reconstruction. Without arsine, arsenic starts to desorb and less arsenic-rich reconstructions are observed, depending on temperature: c(4 x 4) (below 800 K), beta 2(2 x 4) (below 920 K), alpha(2 x 4), andonly with hydrogen carrier gas finally (4 x 2) (above 950 K). Above 920 K the reaction order differs in hydrogen and nitrogen atmosphere, probably due to an etching effect of hydrogen radicals. The five different desorption processes show either a first- or zero-order time dependence. First order is related to the desorption from the terraces and zero order to desorption from the steps (or kinks) on the surfaces. The activation energies for all processes are around 2.5 eV. This energy is, therefore, assumed to be the activation energy for the removal of an arsenic dimer from the surface. (C) 2000 American Institute of Physics. [S0021-8979(00)09203-3].

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Documento generato il 20/01/21 alle ore 01:25:31