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Titolo:
Mobility of sodium in SrS based thin film electroluminescent structures grown by atomic layer epitaxy
Autore:
Lappalainen, R; Karjalainen, M; Serimaa, R; Sevanto, S; Leskela, M;
Indirizzi:
Univ Helsinki, Dept Phys, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 ys, FIN-00014 Helsinki, Finland Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 3, volume: 87, anno: 2000,
pagine: 1153 - 1158
SICI:
0021-8979(20000201)87:3<1153:MOSISB>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
CE; DEVICES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
30
Recensione:
Indirizzi per estratti:
Indirizzo: Lappalainen, R Univ Helsinki, Dept Phys, POB 9, FIN-00014 Helsinki, Finland Univ Helsinki POB 9 Helsinki Finland FIN-00014 ki, Finland
Citazione:
R. Lappalainen et al., "Mobility of sodium in SrS based thin film electroluminescent structures grown by atomic layer epitaxy", J APPL PHYS, 87(3), 2000, pp. 1153-1158

Abstract

Mobility of sodium in SrS-based electroluminescent thin film stacks grown by atomic layer epitaxy was studied in the temperature range 600-850 degrees C using ion implantation for doping and nuclear resonance broadening for profiling of sodium. The crystallinity and orientation of SrS and SrS:Ce films were studied using wide angle x-ray scattering (WAXS). It was found that sodium diffuses rapidly to the interfaces between SrS and upper and lowerAl2O3 insulators. These insulators act effectively as diffusion barriers for sodium up to a temperature of about 700 degrees C. In the case of SrS:Cefilms, even after annealing at high temperatures for long times, the Na concentration in the bulk of the film remained in the range 0.4-0.6 at. % which is about two to three times the concentration of Ce. WAXS measurements revealed the preferred [111] orientation of SrS and SrS:Ce films with an average size of crystallites greater than or equal to 120 nm. It turned out that annealing for a few hours at about 700-750 degrees C was needed to recover the implantation damage and restore the crystallinity of SrS to its original level. (C) 2000 American Institute of Physics. [S0021-8979(00)03402-2].

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Documento generato il 29/09/20 alle ore 04:37:34