Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip
Autore:
Snoeys, W; Faccio, F; Burns, M; Campbell, M; Cantatore, E; Carrer, N; Casagrande, L; Cavagnoli, A; Dachs, C; Di Liberto, S; Formenti, F; Giraldo, A; Heijne, EHM; Jarron, P; Letheren, M; Marchioro, A; Martinengo, P; Meddi, F; Mikulec, B; Morando, M; Morel, M; Noah, E; Paccagnella, A; Ropotar, I; Saladino, S; Sansen, W; Santopietro, F; Scarlassara, F; Segato, GF; Signe, PM; Soramel, F; Vannucci, L; Vleugels, K;
Indirizzi:
CERN, Div EP, MIC Grp, CH-1211 Geneva 23, Switzerland CERN Geneva Switzerland 23 v EP, MIC Grp, CH-1211 Geneva 23, Switzerland Univ Padua, Padua, Italy Univ Padua Padua ItalyUniv Padua, Padua, Italy Ist Nazl Fis Nucl, Padua, Italy Ist Nazl Fis Nucl Padua ItalyIst Nazl Fis Nucl, Padua, Italy Univ La Sapienza, Rome, Italy Univ La Sapienza Rome ItalyUniv La Sapienza, Rome, Italy Ist Nazl Fis Nucl, Rome, Italy Ist Nazl Fis Nucl Rome ItalyIst Nazl Fis Nucl, Rome, Italy Univ Montpellier 2, Montpellier, France Univ Montpellier 2 Montpellier France ontpellier 2, Montpellier, France Univ Bari, Bari, Italy Univ Bari Bari ItalyUniv Bari, Bari, Italy Ist Nazl Fis Nucl, Bari, Italy Ist Nazl Fis Nucl Bari ItalyIst Nazl Fis Nucl, Bari, Italy Katholieke Univ Leuven, Louvain, Belgium Katholieke Univ Leuven Louvain Belgium ke Univ Leuven, Louvain, Belgium Ist Nazl Fis Nucl, Legnaro, Italy Ist Nazl Fis Nucl Legnaro ItalyIst Nazl Fis Nucl, Legnaro, Italy
Titolo Testata:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
fascicolo: 2-3, volume: 439, anno: 2000,
pagine: 349 - 360
SICI:
0168-9002(20000111)439:2-3<349:LTTETR>2.0.ZU;2-A
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOS CAPACITORS; OXIDES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
21
Recensione:
Indirizzi per estratti:
Indirizzo: Snoeys, W CERN, Div EP, MIC Grp, CH-1211 Geneva 23, Switzerland CERN Geneva Switzerland 23 Grp, CH-1211 Geneva 23, Switzerland
Citazione:
W. Snoeys et al., "Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip", NUCL INST A, 439(2-3), 2000, pp. 349-360

Abstract

A new pixel readout prototype has been developed at CERN for high-energy physics applications. This full mixed mode circuit has been implemented in acommercial 0.5 mu m CMOS technology. Its radiation tolerance has been enhanced by designing all NMOS transistors in enclosed geometry and introducingguardrings wherever necessary. The technique is explained and its effectiveness demonstrated on various irradiation measurements on individual transistors and on the prototype. Circuit performance started to degrade only after a total dose of 600 krad-1.7 Mrad depending on the type of radiation. 10keV X-rays, Co-60 gamma-rays, 6.5 MeV protons, and minimum ionizing particles were used. implications of this layout approach on the circuit design and perspectives for even deeper submicron technologies are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/11/20 alle ore 14:21:10