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Titolo:
Laser-processed thin-film transistors fabricated from sputtered amorphous-silicon films
Autore:
Giust, GK; Sigmon, TW;
Indirizzi:
LSI Log, Santa Clara, CA 95054 USA LSI Log Santa Clara CA USA 95054LSI Log, Santa Clara, CA 95054 USA Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94551 USA Univ CalifLawrence Livermore Natl Lab Livermore CA USA 94551 A 94551 USA
Titolo Testata:
IEEE TRANSACTIONS ON ELECTRON DEVICES
fascicolo: 1, volume: 47, anno: 2000,
pagine: 207 - 213
SICI:
0018-9383(200001)47:1<207:LTTFFS>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
POLY-SI TFTS; POLYCRYSTALLINE SILICON; HYDROGEN PASSIVATION; LEAKAGE CURRENT; POLYSILICON; CRYSTALLIZATION; MECHANISMS; MOSFETS;
Keywords:
excimer laser; full melt threshold; gas immersion laser doping; hydrogenation; laser crystallization; poly-Si TFT; sputtered silicon; thin film transistor;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Giust, GK LSI Log, Santa Clara, CA 95054 USA LSI Log Santa Clara CA USA 95054 Log, Santa Clara, CA 95054 USA
Citazione:
G.K. Giust e T.W. Sigmon, "Laser-processed thin-film transistors fabricated from sputtered amorphous-silicon films", IEEE DEVICE, 47(1), 2000, pp. 207-213

Abstract

Low-temperature polysilicon thin-film transistors (TFT's) have been fabricated from sputtered silicon films and characterized as a function of as-deposited hydrogen (H) content and laser crystallization fluence. A general trend is observed where TET performance improves as the H content is lowered. Devices made from similar to 0% H sputtered films perform similar to thosemade from low-pressure chemical-vapor deposition processes (LPCVD), but are fabricated at a much lower processing temperature (300 OC). The best sputtered TFT's had mobilities of similar to 200 cm(2)/Vs, and on/off current ratios of more that 10(8).

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Documento generato il 04/12/20 alle ore 09:09:47