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Titolo:
Application of positron lifetime distribution to the discrimination of defects in semiconductors
Autore:
Chen, ZQ; Wang, Z; Wang, SJ;
Indirizzi:
Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China Wuhan Univ Wuhan Peoples R China 430072 s, Wuhan 430072, Peoples R China
Titolo Testata:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
fascicolo: 1, volume: 160, anno: 2000,
pagine: 139 - 148
SICI:
0168-583X(200001)160:1<139:AOPLDT>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
NUMERICAL LAPLACE INVERSION; AS-GROWN GAAS; SEMIINSULATING GAAS; ELECTRONIC-STRUCTURE; NATIVE VACANCIES; MAXIMUM-ENTROPY; ANNIHILATION; INP; SPECTROSCOPY; COMPLEXES;
Keywords:
positron lifetime distribution; defect; semiconductor;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
28
Recensione:
Indirizzi per estratti:
Indirizzo: Chen, ZQ Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China Wuhan Univ Wuhan Peoples R China 430072 430072, Peoples R China
Citazione:
Z.Q. Chen et al., "Application of positron lifetime distribution to the discrimination of defects in semiconductors", NUCL INST B, 160(1), 2000, pp. 139-148

Abstract

In this paper, two methods of extracting continuous positron lifetime distribution are utilized, one is the numerical Laplace inversion, another is the maximum entropy method. The result of continuous lifetime distribution is used to discriminate the native vacancy-type defects in GaAs and InP withdifferent conduction type. It is demonstrated that the lifetime distribution can give us more detailed information on the native defects. In particular, the direct evidence of positron trapping by vacancies is observed both in semi-insulating GaAs and in p-type InP, of which the identification of defects is still a question in debate. (C) 2000 Elsevier Science B.V. All rights reserved.

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Documento generato il 28/03/20 alle ore 23:58:26