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Titolo:
In-situ laser reflectometry method for wet-etch endpoint detection of VCSEL structure
Autore:
Cho, HK; Lee, JY; Lee, B; Baek, JH; Han, WS;
Indirizzi:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea Korea Adv Inst Sci & Technol Taejon South Korea 305701 5701, South Korea Elect & Telecommun Res Inst, Taejon 305606, South Korea Elect & TelecommunRes Inst Taejon South Korea 305606 05606, South Korea
Titolo Testata:
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
, volume: 35, anno: 1999, supplemento:, S
pagine: S1076 - S1079
SICI:
0374-4884(199912)35:<S1076:ILRMFW>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
GAAS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Cho, HK Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea Korea Adv Inst Sci & Technol Taejon South Korea 305701 uth Korea
Citazione:
H.K. Cho et al., "In-situ laser reflectometry method for wet-etch endpoint detection of VCSEL structure", J KOR PHYS, 35, 1999, pp. S1076-S1079

Abstract

We have investigated the use of in-situ laser reflectometry for etch-depthcontrol in vertical cavity surface emitting laser (VCSEL) structures. We can obtain the precise etch depth by simply counting the number of peak-to-peak during wet-etching process. After the calibration on an AlGaAs/GaAs 20 periods distributed Bragg reflector (DBR) structure, this technique was applied to the monolithic 1.55 mu m VCSEL device process required to etch epilayers of several mu m thickness. In the 1.55 mu m VCSEL structure, the mesawas generated by monitoring the number of peaks at the bottom DBR that corresponded to an etch depth of about 11 mu m. The overall spatial uniformityof the etched sample was within a layer (1000 Angstrom) by the distinctionbetween layers. This process offers the possibility of precise control of etch depth for any multilayer structure.

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Documento generato il 27/11/20 alle ore 15:45:46