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Titolo:
The structure and degradation mechanism of SrBi2Ta2O9 thin films
Autore:
Kim, H; Bae, S; Kim, J; Kim, T; Kim, I; Lee, H; Jeong, J;
Indirizzi:
Univ Ulsan, Dept Phys, Ulsan 680749, South Korea Univ Ulsan Ulsan South Korea 680749 Dept Phys, Ulsan 680749, South Korea Pukyong Natl Univ, Dept Phys, Pusan 608737, South Korea Pukyong Natl UnivPusan South Korea 608737 ys, Pusan 608737, South Korea
Titolo Testata:
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
, volume: 35, anno: 1999, supplemento:, S
pagine: S1214 - S1218
SICI:
0374-4884(199912)35:<S1214:TSADMO>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
FERROELECTRIC PROPERTIES; PB(ZR,TI)O-3; TEMPERATURE; FATIGUE; SYSTEM;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
18
Recensione:
Indirizzi per estratti:
Indirizzo: Kim, H Univ Ulsan, Dept Phys, Ulsan 680749, South Korea Univ Ulsan UlsanSouth Korea 680749 ys, Ulsan 680749, South Korea
Citazione:
H. Kim et al., "The structure and degradation mechanism of SrBi2Ta2O9 thin films", J KOR PHYS, 35, 1999, pp. S1214-S1218

Abstract

SrB2Ta2O9 thin films were grown on Pt/Ti/SiO2/Si substrate by the pulsed laser ablation deposition method. The crystalline fluorite phase was maintain in the annealing temperature from 540 to 750 degrees C and SET phase appeared at 750 degrees C, crystallized at 800 degrees C, which was observed inthe xray diffraction patterns and scanning electron microscopy images. Thegrains, which were spherical-like, increased from about 50 to 325 nm in diameter with increasing annealing temperature from 540 degrees C to 800 degrees C. The SBT film annealed at 800 degrees C showed P-r = 6.1 mu C/cm(2), E-c = 65 kV/cm at applied voltage of 5 V, and the hysteresis loops became saturated at 3 V. The fatigue characteristics of SET thin films with variousapplied voltage and frequency have also been investigated. It revealed that the polarization fatigue occurred with decreasing switching voltage and frequency. This significant polarization fatigue is originated due to partial switching when the switching voltage is lower than saturation voltage (similar to 3 V). The signal/noise ratio had maximum value of 5 at 3 V, which is capable of low-voltage operation in NVFRAM device.

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Documento generato il 05/04/20 alle ore 06:39:07