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Titolo:
The effect of Ta to Si ratio on magnetron sputtered Ta-Si-N thin films
Autore:
Olowolafe, JO; Rau, I; Unruh, KM; Swann, CP; Jawad, Z; Alford, T;
Indirizzi:
Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA Univ DelawareNewark DE USA 19716 Elect & Comp Engn, Newark, DE 19716 USA Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA Univ Delaware Newark DE USA 19716 ept Phys & Astron, Newark, DE 19716 USA Arizona State Univ, Dept Chem Bio & Mat Engn, Tempe, AZ 85287 USA Arizona State Univ Tempe AZ USA 85287 Bio & Mat Engn, Tempe, AZ 85287 USA
Titolo Testata:
JOURNAL OF ELECTRONIC MATERIALS
fascicolo: 12, volume: 28, anno: 1999,
pagine: 1399 - 1402
SICI:
0361-5235(199912)28:12<1399:TEOTTS>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
DIFFUSION-BARRIERS; LAYERS; METALLIZATIONS; CU;
Keywords:
resistivity; sheet resistance; anneal; thermal stability; Ta-Si-N;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Olowolafe, JO Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA Univ Delaware Newark DE USA 19716 ngn, Newark, DE 19716 USA
Citazione:
J.O. Olowolafe et al., "The effect of Ta to Si ratio on magnetron sputtered Ta-Si-N thin films", J ELEC MAT, 28(12), 1999, pp. 1399-1402

Abstract

The role of composition on the resistivity and thermal stability of reactively sputtered Ta-Si-N films have been studied using x-ray diffraction, Rutherford backscattering spectrometry, and sheet resistance measurement. Films with higher silicon to tantalum ratio were found to be more thermally stable and have higher sheet resistance than films with lower Si to Ta ratio. While Ta0.28Si0.07N0.65 starts to crystallize at about 900 degrees C, for example, Ta0.24Si0.10N0.66, and Ta0.24Si0.12N0.64 remained amorphous and thermally stable for heat treatment up to 1100 degrees C. In-situ sheet resistance measurement showed that the resistivity of the alloys varies with composition and decreases with temperature; films with higher Ta/Si ratio have lower resistivity. The resistivity of the films, at 30 degrees C, was about675 Omega-cm, 285 Omega-cm, and 135 Omega-cm and decreased to 61.5 Omega-cm, 22.5 Omega-cm, and 19.5 Omega-cm at 480 degrees C for Ta0.24Si0.12N0.64,Ta0.24Si0.10N0.66, and Ta0.28S0.07N0.651 in that order. Our results indicate that the composition of Ta-Si-N films could be manipulated to obtain lowresistivity films that could be used in device applications.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 18/09/20 alle ore 11:01:18