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Titolo:
Combined sputter and pulsed laser deposition for preparation of thin YBa2Cu3O7-delta films on buffered silicon substrates
Autore:
Schmidt, F; Boschetto, D; Linzen, S; Krausslich, J; Matthes, A; Schmidl, F; Seidel, P;
Indirizzi:
Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany Univ Jena Jena Germany D-07743 nst Festkorperphys, D-07743 Jena, Germany Univ Jena, Inst Opt & Quantenelekt, D-07743 Jena, Germany Univ Jena JenaGermany D-07743 Opt & Quantenelekt, D-07743 Jena, Germany
Titolo Testata:
PHYSICA C
, volume: 327, anno: 1999,
pagine: 99 - 103
SICI:
0921-4534(199911)327:<99:CSAPLD>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Keywords:
YBa2Cu3O7-delta films; buffered silicon substrates; pulsed laser deposition;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Schmidt, F Univ Jena, Inst Festkorperphys, Helmholtzweg 5, D-07743 Jena, Germany Univ Jena Helmholtzweg 5 Jena Germany D-07743 43 Jena, Germany
Citazione:
F. Schmidt et al., "Combined sputter and pulsed laser deposition for preparation of thin YBa2Cu3O7-delta films on buffered silicon substrates", PHYSICA C, 327, 1999, pp. 99-103

Abstract

For the deposition of epitaxial YBa2Cu3O7-delta (YBCO) on silicon substrate it is necessary to deposit buffer layers. We use sputtered Y-stabilized ZrO2 (YSZ) and CeO2 double layers. Use of sputtering for the deposition of the buffer layers avoids some disadvantages of the pulsed laser deposition, like the effect of droplets, to improve the multilayer technology on silicon with respect to their homogeneity and larger area. The YBCO is ex situ deposited by pulsed laser deposition. RES and XRD investigations and electrical measurements were applied for the characterization of the single and multilayer films. The correlation between the characterized properties and theused deposition process were analysed. We demonstrate the high quality of the sputtered buffer layer and the applicability of a combined film deposition for YBCO devices on silicon substrates. (C) 1999 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 22/10/20 alle ore 06:31:50