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Titolo:
Influence of hot carrier dynamics on pulse propagation in semiconductor lasers
Autore:
Kauer, M; Heberle, AP; Allam, J; Baumberg, JJ; Cleaver, JRA;
Indirizzi:
Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England Univ Cambridge Cambridge England CB3 0HE Ctr, Cambridge CB3 0HE, England Univ Cambridge, Cavendish Lab, Hitachi Cambridge Lab, Cambridge CB3 0HE, England Univ Cambridge Cambridge England CB3 0HE Lab, Cambridge CB3 0HE, England
Titolo Testata:
PHYSICA B
fascicolo: 1-4, volume: 272, anno: 1999,
pagine: 394 - 396
SICI:
0921-4526(199912)272:1-4<394:IOHCDO>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Soggetto:
AMPLIFIERS;
Keywords:
quantum-well semiconductor diode lasers; femtosecond pulse injection; high-speed optical techniques; dark-pulse formation;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Kauer, M Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Madingley Rd, CambridgeCB3 0HE, England Univ Cambridge Madingley Rd Cambridge England CB3 0HE E, England
Citazione:
M. Kauer et al., "Influence of hot carrier dynamics on pulse propagation in semiconductor lasers", PHYSICA B, 272(1-4), 1999, pp. 394-396

Abstract

We time resolve the dynamic response of InGaAsP quantum-well semiconductordiode lasers after injection of a femtosecond pulse, using ultrafast upconversion. The injection of a single off-resonant pulse leads to a very fast generation of picosecond 'dark pulses', which then generate bright pulses again, leading to dark-pulse-bright-pulse oscillations with a change-over period of 500 ps. We suggest that nonlinear gain compression causes these oscillations. (C) 1999 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 07/07/20 alle ore 14:41:43