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Titolo:
Patterning of self-assembled monolayers with lateral dimensions of 0.15 mum using advanced lithography
Autore:
Yang, XM; Peters, RD; Kim, TK; Nealey, PF;
Indirizzi:
Univ Wisconsin, Dept Chem Engn, Madison, WI 53706 USA Univ Wisconsin Madison WI USA 53706 Dept Chem Engn, Madison, WI 53706 USA Univ Wisconsin, Ctr Nanotechnol, Madison, WI 53706 USA Univ Wisconsin Madison WI USA 53706 tr Nanotechnol, Madison, WI 53706 USA
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
fascicolo: 6, volume: 17, anno: 1999,
pagine: 3203 - 3207
SICI:
1071-1023(199911/12)17:6<3203:POSMWL>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
ELECTRONS; DAMAGE; GOLD;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Nealey, PF Univ Wisconsin, Dept Chem Engn, 1415 Johnson Dr, Madison, WI 53706 USA Univ Wisconsin 1415 Johnson Dr Madison WI USA 53706 I 53706 USA
Citazione:
X.M. Yang et al., "Patterning of self-assembled monolayers with lateral dimensions of 0.15 mum using advanced lithography", J VAC SCI B, 17(6), 1999, pp. 3203-3207

Abstract

The use of advanced lithography to pattern self-assembled monolayers (SAMs) was investigated as a means to create surfaces with regions of different chemical functionality with dimensions of order 0.10 mu m. SAMs were prepared by the chemisorption of octadecyltrichlorosilane on silicon wafers, and exposed to synchrotron x-ray (0.814 nm) radiation or extreme ultraviolet (EUV, 13.4 nm) radiation. Exposure to x rays in the presence of oxygen resulted in the incorporation of hydroxy (C-OH) and aldehyde (CH=O) functional groups on the SAM surfaces. The extent of chemical modification was a function of exposure dose and air pressure. Patterned SAMs with various shapes at scales from 50 mu m to 0.15 mu m were obtained by exposing SAMs to x rays through a mask, or with interferometric EUV lithography. The SAM patterns were imaged directly by condensation figures and lateral force microscopy, and were imaged indirectly using atomic force microscopy and the topography of thin films of diblock copolymers. The contrast in the indirect method resulted from a difference in film thickness due to different wetting behaviorof thin films of diblock copolymers on the patterned surfaces. (C) 1999 American Vacuum Society. [S0734-211X(99)06306-4].

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/03/20 alle ore 23:31:18