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Titolo:
Control of wet-etching thickness in the vertical cavity surface emitting laser structure by in situ laser reflectometry
Autore:
Cho, HK; Lee, JY; Lee, B; Baek, JH; Han, WS;
Indirizzi:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Yusong Gu, Taejon 305701, South Korea Korea Adv Inst Sci & Technol Taejon South Korea 305701 5701, South Korea Elect & Telecommun Res Inst, Taejon 305600, South Korea Elect & TelecommunRes Inst Taejon South Korea 305600 05600, South Korea
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
fascicolo: 6, volume: 17, anno: 1999,
pagine: 2626 - 2629
SICI:
1071-1023(199911/12)17:6<2626:COWTIT>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Soggetto:
INGAAS/INALAS; INP;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Cho, HK Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Yusong Gu, 373-1 KusongDong, Taejon 305701, South Korea Korea Adv Inst Sci & Technol 373-1Kusong Dong Taejon South Korea 305701
Citazione:
H.K. Cho et al., "Control of wet-etching thickness in the vertical cavity surface emitting laser structure by in situ laser reflectometry", J VAC SCI B, 17(6), 1999, pp. 2626-2629

Abstract

We have investigated the use of in situ laser reflectometry for etch depthcontrol in vertical cavity surface emitting laser (VCSEL) structures, We can obtain the precise etch depth by simply counting the number of oscillations during the wet-etching process. After calibration on an AlGaAs/GaAs 20-period distributed Bragg reflector (DBR) structure, this technique was applied to the monolithic 1.55 mu m VCSEL device process that is required to etch epilayers of several mu m thickness. In the 1.55 mu m VCSEL structure, the mesa was generated by monitoring the number of peaks in the bottom DBR that corresponded to an etch depth of about 11 mu m. The overall spatial uniformity of the etched sample was within a layer (1000 Angstrom) by the distinction between layers. This process offers the possibility of precise control of etch depth for any multilayer structure. (C) 1999 American Vacuum Society. [S0734-211X(99)01406-7].

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Documento generato il 26/11/20 alle ore 08:30:48