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Titolo:
An inertial sensor technology using DRIE and wafer bonding with interconnecting capability
Autore:
Ishihara, K; Yung, CF; Ayon, AA; Schmidt, MA;
Indirizzi:
MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA MIT Cambridge MA USA02139 icrosyst Technol Labs, Cambridge, MA 02139 USA
Titolo Testata:
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
fascicolo: 4, volume: 8, anno: 1999,
pagine: 403 - 408
SICI:
1057-7157(199912)8:4<403:AISTUD>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
PLASMA;
Keywords:
accelerometer; deep reactive ion etching; footing effect; high aspect ratio structures; notching effect; wafer bonding;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Ishihara, K Mitsubishi Chem Corp, Ind Engn Lab, 1000 Kamoshida Cho, Yokohama, Kanagawa227, Japan Mitsubishi Chem Corp 1000 Kamoshida Cho Yokohama Kanagawa Japan 227
Citazione:
K. Ishihara et al., "An inertial sensor technology using DRIE and wafer bonding with interconnecting capability", J MICROEL S, 8(4), 1999, pp. 403-408

Abstract

A novel device structure utilizing deep reactive ion etching (DRIE) technology and aligned wafer bonding was developed. In this structure, an interconnecting scheme for electrical signal routing with signal crossovers is realized. Also, the 'footing effect' and the 'bowing effect,' which are inherent in DRIE processes, were investigated in detail. A mask layout strategy for solving the footing effect was developed, A novel two-step etching process was developed for solving the bowing effect. Lateral accelerometers (one-axis and two-axis) were successfully fabricated using this technology. [426].

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/09/20 alle ore 07:16:43