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Titolo:
Fabrication of natural-barrier ramp-edge Josephson junctions
Autore:
Horibe, M; Inagaki, Y; Matsuda, G; Hayashi, N; Kawai, K; Maruyama, M; Fujimaki, A; Hayakawa, H;
Indirizzi:
Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan Nagoya Univ Nagoya Aichi Japan 4648603 a Ku, Nagoya, Aichi 4648603, Japan
Titolo Testata:
SUPERCONDUCTOR SCIENCE & TECHNOLOGY
fascicolo: 11, volume: 12, anno: 1999,
pagine: 726 - 728
SICI:
0953-2048(199911)12:11<726:FONRJJ>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
6
Recensione:
Indirizzi per estratti:
Indirizzo: Horibe, M Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan Nagoya Univ Furo Cho Nagoya Aichi Japan 4648603 i 4648603, Japan
Citazione:
M. Horibe et al., "Fabrication of natural-barrier ramp-edge Josephson junctions", SUPERCOND S, 12(11), 1999, pp. 726-728

Abstract

We have studied the effect of process parameters on the natural-barrier ramp-edge Josephson junctions using YBa2Cu3Ox electrodes, in order to improveuniformity and reproducibility of junctions. The natural barrier is formedduring an etching process and an annealing process. The junction properties are controlled by an annealing temperature and an annealing pressure. Also the junction characteristics depend on the ramp-edge angle. After ramp structuring, a bulge of the underelectrode is observed by AFM. The IcRn products of the junctions with the bulge of the ramp surface reach 2 mV at 4.2 K. We speculate that the etching condition is a very important parameter in the junction fabrication.

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Documento generato il 07/07/20 alle ore 22:07:28