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Titolo:
Analysis of surface structures through determination of their composition using STM: Si(100)4x3-In and Si(111)4x1-In reconstructions
Autore:
Saranin, AA; Zotov, AV; Lifshits, VG; Ryu, JT; Kubo, O; Tani, H; Harada, T; Katayama, M; Oura, K;
Indirizzi:
Osaka Univ, Fac Engn, Dept Elect Engn, Suita, Osaka 565, Japan Osaka UnivSuita Osaka Japan 565 Dept Elect Engn, Suita, Osaka 565, Japan Inst Automat & Control Proc, Vladivostok 690041, Russia Inst Automat & Control Proc Vladivostok Russia 690041 tok 690041, Russia Far Eastern State Univ, Fac Phys & Engn, Vladivostok 690000, Russia Far Eastern State Univ Vladivostok Russia 690000 divostok 690000, Russia Vladivostok State Univ Econ & Serv, Dept Elect, Vladivostok 690600, RussiaVladivostok State Univ Econ & Serv Vladivostok Russia 690600 600, Russia
Titolo Testata:
PHYSICAL REVIEW B-CONDENSED MATTER
fascicolo: 20, volume: 60, anno: 1999,
pagine: 14372 - 14381
SICI:
0163-1829(19991115)60:20<14372:AOSSTD>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Soggetto:
SCANNING-TUNNELING-MICROSCOPY; INDIUM-INDUCED RECONSTRUCTIONS; SUBSTRATE ATOM RECONSTRUCTION; INITIAL-STAGE GROWTH; X-RAY-DIFFRACTION; SINGLE-DOMAIN; VICINAL SI(111); PHASE; ADSORPTION; HYDROGEN;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
53
Recensione:
Indirizzi per estratti:
Indirizzo: Oura, K Osaka Univ, Fac Engn, Dept Elect Engn, Suita, Osaka 565, Japan Osaka Univ Suita Osaka Japan 565 ct Engn, Suita, Osaka 565, Japan
Citazione:
A.A. Saranin et al., "Analysis of surface structures through determination of their composition using STM: Si(100)4x3-In and Si(111)4x1-In reconstructions", PHYS REV B, 60(20), 1999, pp. 14372-14381

Abstract

The advantages of scanning tunneling microscopy for the determination of the composition of the submonolayer metal/silicon interfaces has been demonstrated using Si(100)4x3-In and Si(111)4x1-In as sample reconstructions. It has been found that the Si(100)4x3-In unit cell is built of 7 In atoms and 6 Si atoms. while the Si(111)4x1-In unit cell contains 3 In atoms and 2 Si atoms in addition to the top Si(111) bilayer. The obtained quantitative information provides the ground for discussion of the plausible atomic arrangement of these reconstructions. [S0163-1829(99)00744-4].

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Documento generato il 01/12/20 alle ore 22:55:30