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Titolo:
Effect of higher silanes in silane plasmas on properties of hydrogenated amorphous silicon films
Autore:
Suzuki, A;
Indirizzi:
Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan Electrotech Lab Tsukuba Ibaraki Japan 3058568 uba, Ibaraki 3058568, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
fascicolo: 11B, volume: 38, anno: 1999,
pagine: L1315 - L1317
SICI:
0021-4922(19991115)38:11B<L1315:EOHSIS>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
A-SI-H; CHEMICAL-VAPOR-DEPOSITION; SOLAR-CELLS; RF-DISCHARGE; DILUTION; SURFACE; GROWTH; STABILITY; DENSITIES;
Keywords:
hydrogenated amorphous silicon; higher silane; photoionization mass spectroscopy; light soaking degradation; high deposition rate;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
29
Recensione:
Indirizzi per estratti:
Indirizzo: Suzuki, A Electrotech Lab, 1-1-4 Umezono, Tsukuba, Ibaraki 3058568, Japan Electrotech Lab 1-1-4 Umezono Tsukuba Ibaraki Japan 3058568 apan
Citazione:
A. Suzuki, "Effect of higher silanes in silane plasmas on properties of hydrogenated amorphous silicon films", JPN J A P 2, 38(11B), 1999, pp. L1315-L1317

Abstract

The properties of hydrogenated amorphous silicon (a-Si:H) were investigated and correlated to the densities of neutral higher silane (HS) molecules in silane radio frequency (rf) glow discharge plasmas which are used to growa-Si:H films. The suppression of defect densities at the light soaked state was observed for "device-grade" a-Si:H with a decrease in the density of HS. On the basis of the dependence of the density of HS on the deposition rate, it is suggested that deterioration of the properties of a-Si:H deposited at a high deposition rate is attributed to the increase in the number ofHSs in silane plasmas.

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Documento generato il 28/09/20 alle ore 05:16:53