Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Characterization of photo leakage current of amorphous silicon thin-film transistors
Autore:
Yamaji, Y; Ikeda, M; Akiyama, M; Endo, T;
Indirizzi:
Toshiba Corp, Res & Dev Ctr, Display Mat & Devices Labs, Isogo Ku, Yokohama, Kanagawa 2350017, Japan Toshiba Corp Yokohama Kanagawa Japan 2350017 ama, Kanagawa 2350017, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 11, volume: 38, anno: 1999,
pagine: 6202 - 6206
SICI:
0021-4922(199911)38:11<6202:COPLCO>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
RECOMBINATION MODEL;
Keywords:
photo leakage current; off-current; FSA-TFT; inverted staggered a-Si TFT;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Yamaji, Y Toshiba Corp, Res & Dev Ctr, Display Mat & Devices Labs, Isogo Ku, 33 ShinIsogo, Yokohama, Kanagawa 2350017, Japan Toshiba Corp 33 Shin Isogo Yokohama Kanagawa Japan 2350017 Japan
Citazione:
Y. Yamaji et al., "Characterization of photo leakage current of amorphous silicon thin-film transistors", JPN J A P 1, 38(11), 1999, pp. 6202-6206

Abstract

The photo leakage current of amorphous silicon thin-film transistors (a-SiTFTs) for switching elements in active-matrix liquid crystal displays (AMLCDs) is studied to achieve high-image-quality LCDs. The position dependenceof photo leakage current generation in the a-Si:H TFT is evaluated using aslit light from the channel side. The generated photo leakage current is composed of a peak at the junction region and a gradual parr at channel region; both of which are larger at the soul ce electrode side than at the drain electrode side. This large photo leakage current at the source electrode side can be explained by the diffusion and tunnel current increase caused by the variation of the quasi Fermi level by photogenerated carriers in the reverse bias source junction and the larger electron mobility than the hole, respectively. The results of this study indicate the importance of the source junction for the TFT off-current, in contrast to studies in the past which put forth that the off-current is limited by the generation-recombination current at the drain junction. Our results indicate the importance of front-side illumination by the reflected-light illumination from the high brightness backlight of AMLCD displays.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/07/20 alle ore 17:06:03