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Titolo:
Enhanced deposition rate of high quality stoichiometric ceramic compounds reactively sputter deposited at low pressure by modulating the discharge current at low frequency
Autore:
Mercs, D; Lapostolle, F; Perry, F; Billard, A; Frantz, C;
Indirizzi:
Ecole Mines, CNRS, UMR 7570, Lab Sci & Genie Surfaces, F-54042 Nancy, France Ecole Mines Nancy France F-54042 & Genie Surfaces, F-54042 Nancy, France
Titolo Testata:
SURFACE & COATINGS TECHNOLOGY
, volume: 119, anno: 1999,
pagine: 916 - 921
SICI:
0257-8972(199909)119:<916:EDROHQ>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
MAGNETRON; AR-N2; TIO2; AL;
Keywords:
ceramic films; high rate deposition; reactive sputtering; TiN-TiO2;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
Citazioni:
25
Recensione:
Indirizzi per estratti:
Indirizzo: Billard, A Ecole Mines, CNRS, UMR 7570, Lab Sci & Genie Surfaces, Parc Saurupt, F-54042 Nancy, France Ecole Mines Parc Saurupt Nancy France F-54042 42 Nancy, France
Citazione:
D. Mercs et al., "Enhanced deposition rate of high quality stoichiometric ceramic compounds reactively sputter deposited at low pressure by modulating the discharge current at low frequency", SURF COAT, 119, 1999, pp. 916-921

Abstract

Low-frequency modulation of the discharge current constitutes an efficientmeans of achieving high rate deposition of stoichiometric ceramic compounds in spite of the so-called unstable sputtering conditions. The main trendsof the process are reviewed in the case of titanium targets sputtered in reactive Ar-O-2 or Ar-N-2 discharges. The effect of the target temperature is also discussed in relation to the stabilisation propensity of a low-frequency modulated discharge. (C) 1999 Elsevier Science S.A. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 26/09/20 alle ore 05:17:21