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Titolo:
Characterization of laser and laser/thermal annealed semiconducting iron silicide thin films
Autore:
Datta, A; Kal, S; Basu, S; Nayak, M; Nath, AK;
Indirizzi:
Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India IndianInst Technol Kharagpur W Bengal India 721302 1302, W Bengal, India Indian Inst Technol, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India Indian Inst Technol Kharagpur W Bengal India 721302 1302, W Bengal, India Ctr Adv Technol, Ind CO2 Laser Sect, Indore 452013, India Ctr Adv TechnolIndore India 452013 CO2 Laser Sect, Indore 452013, India
Titolo Testata:
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
fascicolo: 9, volume: 10, anno: 1999,
pagine: 627 - 631
SICI:
0957-4522(199912)10:9<627:COLALA>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
DISILICIDE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Datta, A Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India Indian Inst Technol Kharagpur W Bengal India 721302 engal, India
Citazione:
A. Datta et al., "Characterization of laser and laser/thermal annealed semiconducting iron silicide thin films", J MAT S-M E, 10(9), 1999, pp. 627-631

Abstract

beta-FeSi2 is an important semiconducting silicide which is being studied extensively. In this paper, we report our results of the effect of laser and laser-thermal annealing on the properties of beta-FeSi2. 5N purity Fe wasdeposited on Si substrate and was subsequently irradiated by CW and pulsedlaser separately followed by thermal annealing to reduce the laser induceddamage. The samples were then characterized by sheet resistance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), optical reflectanceand absorption studies. Lastly, beta-FeSi2/n-Si heterojunctions were fabricated and the effect of laser treatment on the junction ideality factor wasinvestigated. All these characterizations indicated the formation of good quality beta-FeSi2, particularly after pulsed laser followed by thermal treatment.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 01/12/20 alle ore 19:16:00