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Titolo:
Polarized off-axis Raman spectroscopy: A technique for measuring stress tensors in semiconductors
Autore:
Loechelt, GH; Cave, NG; Menendez, J;
Indirizzi:
Motorola Inc, Semicond Prod Sector, Digital DNA Tm Labs, Tempe, AZ 85284 USA Motorola Inc Tempe AZ USA 85284 Digital DNA Tm Labs, Tempe, AZ 85284 USA Motorola Inc, Semicond Prod Sector, Digital DNA Tm Labs, Austin, TX 78721 USA Motorola Inc Austin TX USA 78721 igital DNA Tm Labs, Austin, TX 78721 USA Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA Arizona State Univ Tempe AZ USA 85287 Phys & Astron, Tempe, AZ 85287 USA
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 11, volume: 86, anno: 1999,
pagine: 6164 - 6180
SICI:
0021-8979(199912)86:11<6164:PORSAT>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
INDUCED DISLOCATION GENERATION; ANGULAR-DISPERSION; MICRO-RAMAN; POLYCRYSTALLINE SILICON; ISOLATION TRENCHES; THEORETICAL-MODEL; SCATTERING; PHONONS; STRAIN; SI;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
72
Recensione:
Indirizzi per estratti:
Indirizzo: Loechelt, GH Motorola Inc, Semicond Prod Sector, Digital DNA Tm Labs, Tempe, AZ 85284 USA Motorola Inc Tempe AZ USA 85284 Tm Labs, Tempe, AZ 85284 USA
Citazione:
G.H. Loechelt et al., "Polarized off-axis Raman spectroscopy: A technique for measuring stress tensors in semiconductors", J APPL PHYS, 86(11), 1999, pp. 6164-6180

Abstract

A characterization technique was developed for measuring the complete tensor nature of stress fields in semiconductors. By combining incident light tilted away from the normal axis with polarization of the incident and scattered beams, any Raman-active optical phonon mode can be selectively studied. Once the frequencies and intensities of these phonons are known, the complete stress tensor can be determined. Using this concept, a general, systematic theory and methodology for implementing polarized off-axis Raman spectroscopy was developed that took into account realistic effects which would be encountered in an actual experiment. This methodology was applied to mechanically deformed silicon wafers. By applying loads in different configurations across the wafer, various types of stress were created including tension, compression, and shear. The polarized off-axis Raman technique was validated by comparing its results to both analytic calculations based upon the theory of elasticity and to direct measurements of the wafer curvature using a laser deflection method. (C) 1999 American Institute of Physics. [S0021-8979(99)02922-9].

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Documento generato il 02/04/20 alle ore 13:01:50