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Titolo:
Molecular-beam epitaxy of a strongly lattice-mismatched heterosystem AlN/Si(111) for application in SAW devices
Autore:
Kipshidze, DG; Schenk, HP; Fissel, A; Kaiser, U; Schulze, J; Richter, W; Weihnacht, M; Kunze, R; Krausslich, J;
Indirizzi:
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci St Petersburg Russia 194021 t Petersburg 194021, Russia Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany Univ Jena Jena Germany D-07743 nst Festkorperphys, D-07743 Jena, Germany Inst Festkorper & Werkstofforsch Dresden, D-01171 Dresden, Germany Inst Festkorper & Werkstofforsch Dresden Dresden Germany D-01171 Germany Univ Jena, Inst Opt & Quantenelekt, D-07743 Jena, Germany Univ Jena JenaGermany D-07743 Opt & Quantenelekt, D-07743 Jena, Germany
Titolo Testata:
SEMICONDUCTORS
fascicolo: 11, volume: 33, anno: 1999,
pagine: 1241 - 1246
SICI:
1063-7826(199911)33:11<1241:MEOASL>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
ACOUSTIC-WAVE DEVICES; NITRIDE THIN-FILMS; ALUMINUM NITRIDE; GROWTH; SI(111); ALN; GAN; SILICON; TEMPERATURE; DEPOSITION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
29
Recensione:
Indirizzi per estratti:
Indirizzo: Kipshidze, DG Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci St Petersburg Russia 194021 94021, Russia
Citazione:
D.G. Kipshidze et al., "Molecular-beam epitaxy of a strongly lattice-mismatched heterosystem AlN/Si(111) for application in SAW devices", SEMICONDUCT, 33(11), 1999, pp. 1241-1246

Abstract

The results of using molecular-beam epitaxy for growing piezoelectric AlN films on Si (111) substrates suitable for device applications are reported. The technological conditions for growth of stoichiometric AlN by controlling the surface reconstruction occurring under various thermodynamic conditions on the growth surface are determined. The films of the hexagonal polytype of AlN possess high crystalline perfection and an atomically smooth epitaxial surface. The mechanism for relaxation of the AlN crystal lattice overa distance of one monolayer from the heterojunction is found. It is demonstrated that the AlN film is piezoelectric. Investigations of the temporal characteristics of a SAW attest to a low level of scattering of the wave during propagation. The electromechanical coupling constant is measured in interdigital transducer geometry (lambda=16 mm) and is found to be 0.07 % at afrequency f=286 MHz, in good agreement with the theoretical value for a 1.04-mu m-thick AlN film. (C) 1999 American Institute of Physics. [S1063-7826(99)01911-0].

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/09/20 alle ore 04:39:50