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Titolo:
Thermodynamic analysis of the Ga-In-As-Sb-C-H system
Autore:
Li, JB; Zhang, WJ; Li, CR; Du, ZM;
Indirizzi:
Univ Sci & Technol Beijing, Dept Mat Sci & Engn, Beijing 100083, Peoples RChina Univ Sci & Technol Beijing Beijing Peoples R China 100083 Peoples RChina
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 1-2, volume: 207, anno: 1999,
pagine: 20 - 26
SICI:
0022-0248(199911)207:1-2<20:TAOTGS>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL VAPOR-DEPOSITION; V ALLOY SEMICONDUCTORS; PHASE EPITAXY; MOVPE GROWTH; TEMPERATURE; GAINASSB; LAYERS; MOCVD; OMVPE;
Keywords:
thermodynamics; MOVPE; Ga-In-As-Sb;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
39
Recensione:
Indirizzi per estratti:
Indirizzo: Zhang, WJ Univ Sci & Technol Beijing, Dept Mat Sci & Engn, Beijing 100083,Peoples RChina Univ Sci & Technol Beijing Beijing Peoples R China 100083hina
Citazione:
J.B. Li et al., "Thermodynamic analysis of the Ga-In-As-Sb-C-H system", J CRYST GR, 207(1-2), 1999, pp. 20-26

Abstract

The Ga-Tn-As-Sb-C-H system composed of 8 phases and 74 gaseous species is set up and analyzed thermodynamically to simulate the metalorganic vapor-phase epitaxy (MOVPE) process for (Ga,In)(As,Sb) semiconductor growth. Several phase diagram sections and the composition dependences of semiconductors on the amount of input III-V sources are calculated with the conditions defined according to the practical MOVPE processes. The experimental data are collected and compared with the calculated results. (C) 1999 Elsevier Science B.V. All rights reserved.

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Documento generato il 24/09/20 alle ore 08:22:31