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Titolo:
Role of O-2 in aluminum etching with BCl3/Cl-2/O-2 plasma in high density plasma reactor
Autore:
Baek, KH; Park, C; Lee, WG;
Indirizzi:
Hyundai Elect Ind Co Ltd, Syst IC R&D Ctr, Kyungkido 467701, South Korea Hyundai Elect Ind Co Ltd Kyungkido South Korea 467701 67701, South Korea
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 10, volume: 38, anno: 1999,
pagine: 5829 - 5834
SICI:
0021-4922(199910)38:10<5829:ROOIAE>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
ASPECT RATIO; SI; SIMULATION; CL-2/O-2; FEATURES;
Keywords:
transformer coupled plasma; Al etching; etch stop; O-2 additive; surface oxidation; etch inhibitor; etch retardation; optical emission spectroscopy; X-ray photoelectron spectroscopy;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
22
Recensione:
Indirizzi per estratti:
Indirizzo: Baek, KH Hyundai Elect Ind Co Ltd, Syst IC R&D Ctr, San 136-1,Ami-ri, Kyungkido 467701, South Korea Hyundai Elect Ind Co Ltd San 136-1,Ami-ri Kyungkido South Korea 467701
Citazione:
K.H. Baek et al., "Role of O-2 in aluminum etching with BCl3/Cl-2/O-2 plasma in high density plasma reactor", JPN J A P 1, 38(10), 1999, pp. 5829-5834

Abstract

Role of O-2 in aluminum etching process using BCl3/Cl-2/O-2 plasma was investigated in inductively coupled plasma (ICP) etching system. Optical emission spectroscopy (OES) of BCl3/Cl-2/O-2 plasmas shows that reaction betweenoxygen and boron chloride occurs in the presence of O-2. This reaction seems to result in increase of aluminum etchant chlorine radicals and generation of BxOy species. Increase of chlorine radicals may play role to enhance aluminum etch rate at relatively low O-2 concentration (less than or equal to 6%). As the concentration of O-2 increased, local etch stop of aluminum was observed along the aluminum grain boundary at 9% O-2 and it was extended to cause etch stop on all exposed surface at 15% O-2. Two possible causesof etch stop (i.e. deposition of reaction byproduct BxOy species and surface oxidation of aluminum) were postulated and examined. Investigation of these possibilities shows that the major cause of etch retardation, in the presence of O-2, is surface oxidation of aluminum rather than the formation of inhibitor layer via the deposition of BxOy species.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/11/20 alle ore 02:58:09