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Titolo:
Structural inhomogeneity in hydrogenated amorphous silicon in relation to photoelectric properties and defect density
Autore:
Sakikawa, N; Tamao, M; Miyazaki, S; Hirose, M;
Indirizzi:
Hiroshima Univ, Dept Elect Engn, Higashihiroshima 7398527, Japan HiroshimaUniv Higashihiroshima Japan 7398527 hihiroshima 7398527, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 10, volume: 38, anno: 1999,
pagine: 5768 - 5771
SICI:
0021-4922(199910)38:10<5768:SIIHAS>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Soggetto:
A-SI-H; DANGLING BONDS; MICROVOIDS; DEPOSITION; RESONANCE; CREATION;
Keywords:
hydrogenated amorphous silicon; plasma-enhanced chemical vapor deposition; high-rate deposition; ion flux impinging; light-induced degradation; electron spin resonance; defect density; small-angle X-ray scattering; structural inhomogeneity;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
29
Recensione:
Indirizzi per estratti:
Indirizzo: Sakikawa, N Hiroshima Univ, Dept Elect Engn, 1-4-1 Kagamiyama, Higashihiroshima 7398527, Japan Hiroshima Univ 1-4-1 Kagamiyama Higashihiroshima Japan 7398527
Citazione:
N. Sakikawa et al., "Structural inhomogeneity in hydrogenated amorphous silicon in relation to photoelectric properties and defect density", JPN J A P 1, 38(10), 1999, pp. 5768-5771

Abstract

Light-induced degradation of hydrogenated amorphous silicon (a-Si:H) is suppressed by applying a positive de-bias to an rf electrode (cathode) of a capacitively-coupled reactor at high deposition late (2-2.7 nm/s) conditions. Reduction of the ion Bur impinging on the growing film surface under positive de-bias results in a decrease of the defect density, while the total content in the deposited films is almost independent of dc-bias. It is foundthat the defect density after light soaking is decreased by reducing the structural inhomogeneity, as confirmed by small-angle X-ray scattering analysis and electron spin resonance measurement.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/09/20 alle ore 04:40:06