Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Resonant photoemission characterization of SnO
Autore:
Jimenez, VM; Lassaletta, G; Fernandez, A; Espinos, JP; Yubero, F; Gonzalez-Elipe, AR; Soriano, L; Sanz, JM; Papaconstantopoulos, DA;
Indirizzi:
Univ Sevilla, CSIC, Inst Ciencia Mat Sevilla, Seville 41092, Spain Univ Sevilla Seville Spain 41092 encia Mat Sevilla, Seville 41092, Spain Dept Quim Inorgan, Seville 41092, Spain Dept Quim Inorgan Seville Spain 41092 Quim Inorgan, Seville 41092, Spain Univ Autonoma Madrid, Dept Fis Aplicada, Fac Ciencias C XII, E-28049 Madrid, Spain Univ Autonoma Madrid Madrid Spain E-28049 s C XII, E-28049 Madrid, Spain USN, Res Lab, Complex Syst Theory Branch, Washington, DC 20375 USA USN Washington DC USA 20375 Syst Theory Branch, Washington, DC 20375 USA
Titolo Testata:
PHYSICAL REVIEW B-CONDENSED MATTER
fascicolo: 15, volume: 60, anno: 1999,
pagine: 11171 - 11179
SICI:
0163-1829(19991015)60:15<11171:RPCOS>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
ELECTRON-ENERGY-LOSS; TIN OXIDES; ROOM-TEMPERATURE; HIGH-RESOLUTION; CROSS-SECTIONS; LOSS SPECTRA; METAL-OXIDE; GAS SENSORS; SPECTROSCOPY; FILMS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
39
Recensione:
Indirizzi per estratti:
Indirizzo: Gonzalez-Elipe, AR Univ Sevilla, CSIC, Inst Ciencia Mat Sevilla, Ave Americo Vespucio S-N, Seville 41092, Spain Univ Sevilla Ave Americo Vespucio S-NSeville Spain 41092
Citazione:
V.M. Jimenez et al., "Resonant photoemission characterization of SnO", PHYS REV B, 60(15), 1999, pp. 11171-11179

Abstract

A thick layer of SnO, equivalent in its electronic properties to the bulk material, has been investigated by means of resonant photoemission and the mathematical method of factor analysis. This study has shown that O2p, Sn5s, and Sn5p partial density of states are the main contributions to the valence band of this material. The distribution through the valence band of these partial contributions has been determined by spectral subtraction and factor analysis of the resonance photoemission spectra, as well as by band structure calculation. The resonance behavior (i.e., change in intensity withthe photon energy) of these three contributions has been analyzed. The Sn5p levels present a typical Fano-like behavior with a minimum intensity at about 28 eV and a maximum at 40 eV. The Sn5s partial density distribution also depicts a change in intensity as a function of the photon energy with a minimum situated at 35 eV and a maximum at 55 eV. Tentatively, this behavior has been linked to the existence of a broad absorption feature detected by electron energy loss spectroscopy and constant final state spectra, both depicting a broad maximum at about 50 eV. [S0163-1829(99)07339-7].

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/11/20 alle ore 21:33:20