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Titolo: Multipletrapping model with fielddependent effects on carrier time of flight in aSi : H
Autore: Chen, WC; Hamel, LA; Yelon, A;
 Indirizzi:
 Univ Montreal, Dept Phys, GCM, Montreal, PQ H3C 3J7, Canada Univ MontrealMontreal PQ Canada H3C 3J7 CM, Montreal, PQ H3C 3J7, Canada Ecole Polytech, Dept Genie Phys, GCM, Montreal, PQ H3C 3A7, Canada Ecole Polytech Montreal PQ Canada H3C 3A7 M, Montreal, PQ H3C 3A7, Canada
 Titolo Testata:
 JOURNAL OF NONCRYSTALLINE SOLIDS
fascicolo: 13,
volume: 258,
anno: 1999,
pagine: 223  233
 SICI:
 00223093(199911)258:13<223:MMWFEO>2.0.ZU;2V
 Fonte:
 ISI
 Lingua:
 ENG
 Soggetto:
 HYDROGENATED AMORPHOUSSILICON; OFFLIGHT; ELECTRONDRIFT; SIMULATIONS; TRANSPORT;
 Tipo documento:
 Article
 Natura:
 Periodico
 Settore Disciplinare:
 Physical, Chemical & Earth Sciences
 Citazioni:
 21
 Recensione:
 Indirizzi per estratti:
 Indirizzo: Hamel, LA Univ Montreal, Dept Phys, GCM, CP 6128, Montreal, PQ H3C 3J7, Canada Univ Montreal CP 6128 Montreal PQ Canada H3C 3J7 H3C 3J7, Canada



 Citazione:
 W.C. Chen et al., "Multipletrapping model with fielddependent effects on carrier time of flight in aSi : H", J NONCRYST, 258(13), 1999, pp. 223233
Abstract
We have performed Monte Carlo (MC) calculations of the temperature (T) andfield (F) dependence of the behavior of the multipletrapping model assuming exponential band tails of localized states with two different models forfielddependent effects for high field carrier transport. The properties calculated are the effective temperature, T,rr, the drift mobility, mu(d)(T,F), and the dispersion parameters alpha(1)(T,F) and alpha(2)(T,F), before and after the transit time, t(T) The calculation with elastic tunnelling clearly shows a separation of the field and temperature effects in the dispersion parameters alpha(T,F). In this case, Teff is not clearly defined from the electron distribution function, f(i)(E), in localized states. The calculation with fieldassisted detrapping (diagonal jump from localized states to the band) shows a smooth transition in the cl(T,F) and a welldefined effective temperature. We suggest that this model is more appropriate for charge transport in the presence of high field. Our MC results for cl and drift mobility are compared with high field timeofflight (TOF) experimental data for temperatures ranging from 100 to 400 K, with very acceptable agreement with the diagonal jump model(DJM). (C) 1999 Elsevier Science B.V. All rights reserved.
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Documento generato il 27/11/20 alle ore 10:15:59