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Titolo:
Multiple-trapping model with field-dependent effects on carrier time of flight in a-Si : H
Autore:
Chen, WC; Hamel, LA; Yelon, A;
Indirizzi:
Univ Montreal, Dept Phys, GCM, Montreal, PQ H3C 3J7, Canada Univ MontrealMontreal PQ Canada H3C 3J7 CM, Montreal, PQ H3C 3J7, Canada Ecole Polytech, Dept Genie Phys, GCM, Montreal, PQ H3C 3A7, Canada Ecole Polytech Montreal PQ Canada H3C 3A7 M, Montreal, PQ H3C 3A7, Canada
Titolo Testata:
JOURNAL OF NON-CRYSTALLINE SOLIDS
fascicolo: 1-3, volume: 258, anno: 1999,
pagine: 223 - 233
SICI:
0022-3093(199911)258:1-3<223:MMWFEO>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Soggetto:
HYDROGENATED AMORPHOUS-SILICON; OF-FLIGHT; ELECTRON-DRIFT; SIMULATIONS; TRANSPORT;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
21
Recensione:
Indirizzi per estratti:
Indirizzo: Hamel, LA Univ Montreal, Dept Phys, GCM, CP 6128, Montreal, PQ H3C 3J7, Canada Univ Montreal CP 6128 Montreal PQ Canada H3C 3J7 H3C 3J7, Canada
Citazione:
W.C. Chen et al., "Multiple-trapping model with field-dependent effects on carrier time of flight in a-Si : H", J NON-CRYST, 258(1-3), 1999, pp. 223-233

Abstract

We have performed Monte Carlo (MC) calculations of the temperature (T) andfield (F) dependence of the behavior of the multiple-trapping model assuming exponential band tails of localized states with two different models forfield-dependent effects for high field carrier transport. The properties calculated are the effective temperature, T,rr, the drift mobility, mu(d)(T,F), and the dispersion parameters alpha(1)(T,F) and alpha(2)(T,F), before and after the transit time, t(T) The calculation with elastic tunnelling clearly shows a separation of the field and temperature effects in the dispersion parameters alpha(T,F). In this case, T-eff is not clearly defined from the electron distribution function, f(i)(E), in localized states. The calculation with field-assisted detrapping (diagonal jump from localized states to the band) shows a smooth transition in the cl(T,F) and a well-defined effective temperature. We suggest that this model is more appropriate for charge transport in the presence of high field. Our MC results for cl and drift mobility are compared with high field time-of-flight (TOF) experimental data for temperatures ranging from 100 to 400 K, with very acceptable agreement with the diagonal jump model(DJM). (C) 1999 Elsevier Science B.V. All rights reserved.

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Documento generato il 27/11/20 alle ore 10:15:59