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Titolo:
Properties of atomic layer deposited (Ta1-xNbx)(2)O-5 solid solution filmsand Ta2O5-Nb2O5 nanolaminates
Autore:
Kukli, K; Ritala, M; Leskela, M;
Indirizzi:
Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland Tartu State Univ, Inst Expt Phys & Technol, EE-51010 Tartu, Estonia Tartu State Univ Tartu Estonia EE-51010 Technol, EE-51010 Tartu, Estonia
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 10, volume: 86, anno: 1999,
pagine: 5656 - 5662
SICI:
0021-8979(19991115)86:10<5656:POALD(>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
OXIDE THIN-FILMS; CHEMICAL-VAPOR-DEPOSITION; TANTALUM OXIDE; DIELECTRIC-PROPERTIES; ELECTRICAL-CONDUCTIVITY; EPITAXY; GROWTH; TA2O5; TEMPERATURE; TA(OC2H5)(5);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
54
Recensione:
Indirizzi per estratti:
Indirizzo: Kukli, K Univ Helsinki, Dept Chem, POB 55, FIN-00014 Helsinki, Finland Univ Helsinki POB 55 Helsinki Finland FIN-00014 elsinki, Finland
Citazione:
K. Kukli et al., "Properties of atomic layer deposited (Ta1-xNbx)(2)O-5 solid solution filmsand Ta2O5-Nb2O5 nanolaminates", J APPL PHYS, 86(10), 1999, pp. 5656-5662

Abstract

(Ta1-xNbx)(2)O-5 solid solution films and Ta2O5-Nb2O5 nanolaminates have been grown in an atomic layer deposition process at 300 and 325 degrees C. TaCl5 or Ta(OC2H5)(5) and Nb(OC2H5)(5) have been used as metal precursors while H2O has been applied as the oxygen source. Application of Ta(OC2H5)(5) resulted in amorphous films with considerably better thickness uniformity than that characteristic of TaCl5-based process. Application of TaCl5 resulted in crystallized films. The high-field leakage current in (Ta1-xNbx)(2)O-5 solid solution films with x=0.02-0.07 decreases by two to three orders ofmagnitude when compared to that of the nondoped Ta2O5. The permittivity ofTa2O5 films was 25 while the permittivity of amorphous or partially crystallized solid solution films and nanolaminates increased up to 33. (C) 1999 American Institute of Physics. [S0021-8979(99)02322-1].

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Documento generato il 23/09/20 alle ore 12:16:44