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Titolo:
Investigation of the mechanism of titanium silicide reaction using ion-beam-assisted deposition
Autore:
Chang, JH; Kim, GB; Yoon, DS; Baik, HK; Yoo, DJ; Lee, SM;
Indirizzi:
Yonsei Univ, Dept Engn Met, Seoul 120749, South Korea Yonsei Univ Seoul South Korea 120749 Engn Met, Seoul 120749, South Korea Kangweon Natl Univ, Dept Mat Engn, Chunchon 200701, South Korea Kangweon Natl Univ Chunchon South Korea 200701 nchon 200701, South Korea
Titolo Testata:
APPLIED PHYSICS LETTERS
fascicolo: 19, volume: 75, anno: 1999,
pagine: 2900 - 2902
SICI:
0003-6951(19991108)75:19<2900:IOTMOT>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
PHASE-FORMATION SEQUENCE; EFFECTIVE HEAT; FORMATION MODEL; THIN-FILMS; TISI2;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Chang, JH Yonsei Univ, Dept Engn Met, Seoul 120749, South Korea Yonsei Univ Seoul South Korea 120749 Seoul 120749, South Korea
Citazione:
J.H. Chang et al., "Investigation of the mechanism of titanium silicide reaction using ion-beam-assisted deposition", APPL PHYS L, 75(19), 1999, pp. 2900-2902

Abstract

In order to promote the formation of C54 TiSi2, the suppression of C49 TiSi2 formation by ion-beam-assisted deposition of Ti film was investigated. When the Ti film was deposited without ion bombardment, C49 TiSi2 was formedat 600 degrees C. In contrast, in the case where the Ti film was depositedwith concurrent ion bombardment, TiSi formation occurred at the same temperature. The formation of TiSi was attributed to the enhancement of both Si and Ti diffusion below 600 degrees C, due to grain refinement induced by Ar-ion-beam bombardment. By the adoption of ion-beam-assisted deposition to the conventional Ti silicide process, the gate line width dependence of C54 TiSi2 formation can be eliminated, since this formation is achieved via a direct interfacial reaction between TiSi and Si, and not a conversion of C49TiSi2. (C) 1999 American Institute of Physics. [S0003-6951(99)02945-9].

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Documento generato il 04/07/20 alle ore 21:25:10