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Titolo:
Proposal on temperature-insensitive semiconductor lasers
Autore:
Numai, T; Mizutani, N; Nitta, J;
Indirizzi:
Canon Res Ctr, Atsugi, Kanagawa 2430193, Japan Canon Res Ctr Atsugi Kanagawa Japan 2430193 sugi, Kanagawa 2430193, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 8, volume: 38, anno: 1999,
pagine: 4764 - 4767
SICI:
0021-4922(199908)38:8<4764:POTSL>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Keywords:
semiconductor laser; wavelength; refractive index; threshold current;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
3
Recensione:
Indirizzi per estratti:
Indirizzo: Numai, T Canon Res Ctr, 5-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430193,Japan Canon Res Ctr 5-1 Morinosato Wakamiya Atsugi Kanagawa Japan 2430193
Citazione:
T. Numai et al., "Proposal on temperature-insensitive semiconductor lasers", JPN J A P 1, 38(8), 1999, pp. 4764-4767

Abstract

We propose temperature-insensitive semiconductor lasers which use compensation layers with negative refractive index temperature coefficients. It is theoretically shown that the maximum wavelength shift is -1.06 Angstrom with temperature change within a range of 100 K. It is also expected that the characteristic temperature is high because the band gap of the compensationlayer increases with temperature.

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Documento generato il 28/09/20 alle ore 17:31:54