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Titolo:
Controllable nanopit formation on Si(001) with a scanning tunneling microscope
Autore:
Ueda, N; Sudoh, K; Li, N; Yoshinobu, T; Iwasaki, H;
Indirizzi:
Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan Osaka Univ Osaka Japan 5670047 Inst Sci & Ind Res, Osaka 5670047, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 9A, volume: 38, anno: 1999,
pagine: 5236 - 5238
SICI:
0021-4922(199909)38:9A<5236:CNFOSW>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Soggetto:
NANOMETER-SCALE; SURFACES; SILICON; STM;
Keywords:
nanofabrication; field evaporation; nanopit; silicon; scanning tunneling microscopy;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
22
Recensione:
Indirizzi per estratti:
Indirizzo: Ueda, N Osaka Univ, Inst Sci & Ind Res, 8-1 Mihogaoka, Osaka 5670047, Japan Osaka Univ 8-1 Mihogaoka Osaka Japan 5670047 Osaka 5670047, Japan
Citazione:
N. Ueda et al., "Controllable nanopit formation on Si(001) with a scanning tunneling microscope", JPN J A P 1, 38(9A), 1999, pp. 5236-5238

Abstract

The possibility of controlling the field-induced nanoscale-pit formation on the Si(001) surface by using an ultrahigh-vacuum scanning tunneling microscope has been demonstrated. Quadrilateral nanoscale-pits can be formed at high temperatures of 500-600 degrees C by strong electric fields between the sample and the scanning tip through layer by layer removal of Si atoms from the silicon surface. The depth of nanopits increases linearly with the duration of applying electric fields. An array of uniformly shaped nanopits can be fabricated, indicating the controllability of this nanofabrication technique.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 22/01/20 alle ore 21:38:21