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Titolo:
Growth and characterization of hot-wall epitaxial InGaN films using mixed (Ga plus In) source
Autore:
Chu, S; Saisho, T; Fujimura, K; Sakakibara, S; Tanoue, F; Ishino, K; Ishida, A; Harima, H; Oka, Y; Takahiro, K; Chen, YF; Yao, T; Fujiyasu, H;
Indirizzi:
Shizuoka Univ, Fac Engn, Hamamatsu, Shizuoka 4328561, Japan Shizuoka UnivHamamatsu Shizuoka Japan 4328561 u, Shizuoka 4328561, Japan Susuki Corp, Miyakoda Elect Tech Ctr, Hamamatsu, Shizuoka 431, Japan Susuki Corp Hamamatsu Shizuoka Japan 431 , Hamamatsu, Shizuoka 431, Japan Yamaha Corp, Toyooka, Shizuoka 438, Japan Yamaha Corp Toyooka Shizuoka Japan 438 Corp, Toyooka, Shizuoka 438, Japan Osaka Univ, Dept Appl Phys, Osaka 5650871, Japan Osaka Univ Osaka Japan 5650871 niv, Dept Appl Phys, Osaka 5650871, Japan Tohoku Univ, Sci Measurements Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan Tohoku Univ Sendai Miyagi Japan 9808577 Ku, Sendai, Miyagi 9808577, Japan Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan Tohoku Univ Sendai Miyagi Japan 9808577 Ku, Sendai, Miyagi 9808577, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 9A, volume: 38, anno: 1999,
pagine: 4973 - 4979
SICI:
0021-4922(199909)38:9A<4973:GACOHE>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; QUANTUM-WELL STRUCTURES; MOLECULAR-BEAM EPITAXY; PHASE-SEPARATION; LASER-DIODES; BAND-GAP; PHOTOLUMINESCENCE; EPILAYERS; BLUE;
Keywords:
InGaN; GaN; hot-wall epitaxy; mixed source; photoluminescence; Raman shift; indium incorporation;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
24
Recensione:
Indirizzi per estratti:
Indirizzo: Chu, S Shizuoka Univ, Fac Engn, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328561,Japan Shizuoka Univ 3-5-1 Johoku Hamamatsu Shizuoka Japan 4328561 , Japan
Citazione:
S. Chu et al., "Growth and characterization of hot-wall epitaxial InGaN films using mixed (Ga plus In) source", JPN J A P 1, 38(9A), 1999, pp. 4973-4979

Abstract

A simple mixed-source (metallic gallium and indium) method has been used successfully in a hot-wall epitaxial system to grow high-quality InGaN filmson sapphire with GaN buffer layers. The InGaN films exhibit sharp and strong near-band-edge-emissions, ranging from violet (384 nm) to blue (448 nm),with photoluminescence (PL) peak widths ranging from 12-33 nm at room temperature. The influence of the mixed-source In/Ga ratio on the In incorporation and crystal quality is investigated, and it is found that a relatively low In/Ga ratio, 1/4-1/5 in the source or 2-3 in the vapor is desirable forimproving the crystal quality and enhancing In incorporation. The PL spectra are obtained from 10 K to 300 K and the activation energy, deduced from the thermal quenching of the PL intensity, is about 30.5 meV, suggesting a rather small compositional fluctuation. PL peaks also exhibit anomalous redshifts (10-70 K) and blue shifts (80-140 K).

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Documento generato il 04/07/20 alle ore 14:50:30