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Titolo:
Direct wafer bonding and layer transfer - a new approach to integration offerroelectric oxides into silicon technology
Autore:
Alexe, M; Senz, S; Pignolet, A; Hesse, D; Gosele, U;
Indirizzi:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys Halle Germany D-06120 20 Halle, Germany
Titolo Testata:
FERROELECTRICS
fascicolo: 1-4, volume: 231, anno: 1999,
pagine: 757 - 766
SICI:
0015-0193(1999)231:1-4<757:DWBALT>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILMS; HETEROSTRUCTURES; TRANSISTORS;
Keywords:
metal-ferroelectric-silicon structures; interface trap density; direct wafer bonding; TEM analysis;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
18
Recensione:
Indirizzi per estratti:
Indirizzo: Alexe, M Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys Halle Germany D-06120 Germany
Citazione:
M. Alexe et al., "Direct wafer bonding and layer transfer - a new approach to integration offerroelectric oxides into silicon technology", FERROELECTR, 231(1-4), 1999, pp. 757-766

Abstract

Metal-ferroelectric-silicon (MFS) structures were fabricated by a layer transfer process and direct wafer bonding (DWB) and by direct deposition of ferroelectric films onto Si. Detailed transmission electron microscope (TEM)investigations revealed that a direct wafer bonding and layer transfer process yields good quality ferroelectric/Si interfaces. C-V characteristics and interface trap measurements show a large difference for Au-ferroelectric-Si structures fabricated by bonding or by direct deposition. For directly deposited interfaces the trap densities are ranging from 2x10(12)cm(-2)eV(-1) for SBT/Si to 2x10(13) cm(-2)eV(-1) for PZT/Si. For bonded interfaces, irrespective of the top ferroelectric layer, the trap density is about 4x10(11)cm(2)eV(-1).

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 23/09/20 alle ore 13:07:26