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Titolo:
Parameters of mesoscopic non-uniformities and their influence on the Hall mobility in undoped high-resistivity LEC GaAs
Autore:
Siegel, W; Schulte, S; Kretzer, U; Kuhnel, G;
Indirizzi:
TU Bergakademie Freiberg, Inst Expt Phys, D-09596 Freiberg, Germany TU Bergakademie Freiberg Freiberg Germany D-09596 9596 Freiberg, Germany Freiberger Compound Mat GmbH, D-09584 Freiberg, Germany Freiberger Compound Mat GmbH Freiberg Germany D-09584 Freiberg, Germany
Titolo Testata:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
fascicolo: 10, volume: 14, anno: 1999,
pagine: 905 - 908
SICI:
0268-1242(199910)14:10<905:POMNAT>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
BULK GAAS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Siegel, W TU Bergakademie Freiberg, Inst Expt Phys, Silbermannstr 1, D-09596 Freiberg, Germany TU Bergakademie Freiberg Silbermannstr 1 Freiberg Germany D-09596
Citazione:
W. Siegel et al., "Parameters of mesoscopic non-uniformities and their influence on the Hall mobility in undoped high-resistivity LEC GaAs", SEMIC SCI T, 14(10), 1999, pp. 905-908

Abstract

The Hall mobility in undoped high-resistivity GaAs grown by the liquid encapsulation Czochralski technique is strongly reduced due to mesoscopic electrical non-uniformities related to the cellular structure of dislocations. According to model calculations using effective medium theory and approximating the non-uniformities by a mixture of two different phases (cell walls and cell interiors) the most essential inhomogeneity parameters are the ratio of the carrier concentrations and the ratio of the volumes of both phases. Comparing the calculated dependences of the Hall mobility on the carrierconcentration and on the temperature with experimental results the different influences of both parameters could be separated.

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Documento generato il 28/03/20 alle ore 13:52:01