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Titolo:
Observation of phase separation and ordering in the InAlAs epilayer grown on InP at the low temperature
Autore:
Cho, HK; Lee, JY; Kwon, MS; Lee, B; Baek, JH; Han, WS;
Indirizzi:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 30501, South Korea Korea Adv Inst Sci & Technol Taejon South Korea 30501 30501, South Korea Elect & Telecommun Res Inst, Taejon 305600, South Korea Elect & TelecommunRes Inst Taejon South Korea 305600 05600, South Korea
Titolo Testata:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
fascicolo: 3, volume: 64, anno: 1999,
pagine: 174 - 179
SICI:
0921-5107(19991015)64:3<174:OOPSAO>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; CHEMICAL-VAPOR-DEPOSITION; OPTICAL-PROPERTIES; LAYERS; IN0.52AL0.48AS; DECOMPOSITION; DEPENDENCE; ALLOYS; GAP;
Keywords:
phase separation; ordering; MOCVD; InAlAs; TEM;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
18
Recensione:
Indirizzi per estratti:
Indirizzo: Cho, HK Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, 373-1 Kusong Dong, Taejon 30501, South Korea Korea Adv Inst Sci & Technol 373-1 Kusong Dong Taejon South Korea 30501
Citazione:
H.K. Cho et al., "Observation of phase separation and ordering in the InAlAs epilayer grown on InP at the low temperature", MAT SCI E B, 64(3), 1999, pp. 174-179

Abstract

We have studied the phase separation and ordering phenomenon of InAlAs epilayers grown on InP substrate by metal-organic chemical vapor deposition (MOCVD). From the intensity and full width half maximum FWHM of double-crystal X-ray diffraction (DCXRD) and photoluminescence (PL), we observed that the structural and optical quality of InAlAs epilayers were improved as growth temperature increased. The band-gap reduction due to phase separation andordering is 291, 246 and 28 meV in the InAlAs epilayers grown at 565, 615 and 700 degrees C, respectively. The maximum degree of phase separation wasobtained from the InAlAs epilayer grown at 565 degrees C. However, the maximum degree of ordering was obtained at the medium growth temperature. A rapid thermal annealing experiment showed a maximum band-gap shift of 78 meV at 880 degrees C for 3 min. Transmission electron microscopy (TEM) showed that the origin of the blue shift of the band-gap was the complete disappearance of ordering and most of the total band-gap reduction (approximate to 3/4) occurred by phase separation. (C) 1999 Elsevier Science S.A. All rightsreserved.

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Documento generato il 27/11/20 alle ore 15:24:37