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Titolo:
Atom-by-atom growth of cadmium sulfide thin films by electroreduction of aqueous Cd2+-SCN- complex
Autore:
Yoshida, T; Yamaguchi, K; Kazitani, T; Sugiura, T; Minoura, H;
Indirizzi:
Gifu Univ, Fac Engn, Dept Chem, Gifu 5011193, Japan Gifu Univ Gifu Japan5011193 v, Fac Engn, Dept Chem, Gifu 5011193, Japan
Titolo Testata:
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
fascicolo: 1-2, volume: 473, anno: 1999,
pagine: 209 - 216
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL BATH DEPOSITION; IONIC-LAYER ADSORPTION; MERCURY-ELECTRODES; CDS; THIOCYANATE; MECHANISM; THIOUREA; SULFUR; SELENOCYANATE; REDUCTION;
Keywords:
electrodeposition; underpotential deposition; catalytic reduction; epitaxial growth; cadmium sulfide; thiocyanate;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
40
Recensione:
Indirizzi per estratti:
Indirizzo: Yoshida, T Gifu Univ, Fac Engn, Dept Chem, Yanagido 1-1, Gifu 5011193, Japan Gifu Univ Yanagido 1-1 Gifu Japan 5011193 Gifu 5011193, Japan
Citazione:
T. Yoshida et al., "Atom-by-atom growth of cadmium sulfide thin films by electroreduction of aqueous Cd2+-SCN- complex", J ELEC CHEM, 473(1-2), 1999, pp. 209-216

Abstract

Electrodeposition of cadmium sulfide thin films was realized by the electroreduction of the aqueous thiocyanato complex of Cd2+. Formation of CdS is supposed to proceed via metal-catalyzed ligand reduction. The film thickness increased linearly with the electricity consumed, confirming the electrochemical growth of CdS. The deposition bath was fairly stable and could be used repeatedly to prepare many CdS films. While all the previously reportedtechniques for the chemical or electrochemical growth of CdS thin films inaqueous systems are accompanied by homogeneous chemical reactions to generate solid particles of CdS or S in the bulk of the solutions, the present technique seems to be the only example to achieve purely electrochemical growth of CdS from a single solution. The resultant CdS thin film had a uniform structure in which each grain was made up with single phase crystalline hexagonal CdS. When the deposition was carried out on poly-crystalline Ni, the deposited CdS thin film showed a strong preferential orientation with the c-axis perpendicular to the substrate surface, suggesting an epitaxial growth of 6-fold planes of CdS onto Ni(1 1 1) planes in a (root 3 x root 3)R30 degrees structure, owing to their small lattice mismatch of 4.17%. (C) 1999 Elsevier Science S.A. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/07/20 alle ore 03:25:26