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Titolo:
First demonstration of rectifying property of p-i-n heterojunctions fabricated by tri-layered semiconducting oxides
Autore:
Sugiura, M; Uragou, K; Noda, M; Tachiki, M; Kobayashi, T;
Indirizzi:
Osaka Univ, Fac Engn Sci, Dept Elect Engn, Toyonaka, Osaka 560, Japan Osaka Univ Toyonaka Osaka Japan 560 lect Engn, Toyonaka, Osaka 560, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 4B, volume: 38, anno: 1999,
pagine: 2675 - 2678
SICI:
0021-4922(199904)38:4B<2675:FDORPO>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
EXCIMER-LASER DEPOSITION; MASK ECLIPSE METHOD; SRTIO3 FILMS;
Keywords:
oxide semiconductor; La0.85Sr0.15MnO3; SrTiO3; La0.05Sr0.95TiO3; epitaxial film; p-i-n diode; heterojunction; rectifying property; active oxide devices;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Sugiura, M Osaka Univ, Fac Engn Sci, Dept Elect Engn, 1-3 Machikaneyama, Toyonaka, Osaka 560, Japan Osaka Univ 1-3 Machikaneyama Toyonaka Osaka Japan560 60, Japan
Citazione:
M. Sugiura et al., "First demonstration of rectifying property of p-i-n heterojunctions fabricated by tri-layered semiconducting oxides", JPN J A P 1, 38(4B), 1999, pp. 2675-2678

Abstract

We have fabricated semiconducting oxide p-i-n diodes in order to explore minority carrier injection effects in oxide materials. The diodes comprised p-La0.85Sr0.15MnO3/i-SrTiO3/n-La0.05Sr0.95TiO3. All oxide layers were grownepitaxially by the eclipse pulsed laser deposition method on (100) SrTiO3 substrates. The diodes showed good rectifying properties, and from the flat-band capacitance measurement, we obtained a diffusion potential of about 0.2,V for these diodes in agreement with the calculated results. In the lower temperature regime, the space-charge-limited-current property was pronounced, arising from residual traps inside the i-SrTiO3 layer. The backward current was mostly due to tunneling through the i-SrTiO3 layer, showing no meaningful expansion of depletion regions in both p- and n-oxide layers.

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Documento generato il 04/07/20 alle ore 17:48:16