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Titolo:
STRICT THERMAL NITRIDATION SELECTIVITY BETWEEN SI AND GE USED AS A CHEMICAL PROBE OF THE OUTERMOST LAYER OF SI1-XGEX ALLOYS AND GE SI(001) OR SI/GE(001) HETEROSTRUCTURES/
Autore:
AUBEL D; DIANI M; BISCHOFF JL; BOLMONT D; KUBLER L;
Indirizzi:
FAC SCI & TECH MULHOUSE,PHYS & SPECTROSCOPIE ELECTRON LAB,CNRS,URA 1435,4 RUE FRERES LUMIERE F-68093 MULHOUSE FRANCE FAC SCI & TECH MULHOUSE,PHYS & SPECTROSCOPIE ELECTRON LAB,CNRS,URA 1435,4 RUE FRERES LUMIERE F-68093 MULHOUSE FRANCE
Titolo Testata:
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
fascicolo: 4, volume: 12, anno: 1994,
pagine: 2699 - 2704
SICI:
1071-1023(1994)12:4<2699:STNSBS>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; X-RAY PHOTOELECTRON; OXYGEN-ADSORPTION; NH3 ADSORPTION; SURFACE; SI(100); OXIDATION; GROWTH; SI(001); XPS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
38
Recensione:
Indirizzi per estratti:
Citazione:
D. Aubel et al., "STRICT THERMAL NITRIDATION SELECTIVITY BETWEEN SI AND GE USED AS A CHEMICAL PROBE OF THE OUTERMOST LAYER OF SI1-XGEX ALLOYS AND GE SI(001) OR SI/GE(001) HETEROSTRUCTURES/", Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2699-2704

Abstract

The thermal reactivity of NH3 with Si(001), Ge(001), Si1-xGex(001), and thinly Ge-covered Si(001) or Si-covered Ge(001) surfaces has been studied by means of in situ x-ray photoelectron spectroscopy in a temperature domain (T approximately 600-degrees-C) compatible with the usual growth of Ge-Si based heterostructures. A very marked difference between Si(001) and Ge(001) initial sticking coefficients is found, the latter surface being totally inert against nitridation by NH3 in contrast with the Si(001) surface. This nitridation selectivity provides easy access to information about surface termination in different situations where Si and Ge are potentially mixed, the reactivity depending onwhether Si appears at the reactive interface or not. As a test, comparing the nitrogen uptake curves in the early stages of NH3 exposure, for all the studied structures except Si(001), a Ge-like initial sticking coefficient or a non-nitriding behavior is found. This is fairly explained on the basis of the well-known concepts of the Stranski-Krastanov growth mode for the Ge/Si system and by Ge surface segregation forthe Si1-xGex and Si/Ge systems. Our result also implies the need of plasma-assisted treatments in order to achieve simultaneous Si and Ge nitridation of SiGe alloys.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/10/20 alle ore 05:38:54