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Titolo:
Heteroepitaxial growth of PZT thin films on LiF substrate by pulsed laser deposition
Autore:
Hamedi, LH; Guilloux-Viry, M; Perrin, A; Garry, G;
Indirizzi:
Univ Rennes 1, Chim Solide & Inorgan Mol Lab, CNRS, UMR 6511, F-35042 Rennes, France Univ Rennes 1 Rennes France F-35042 RS, UMR 6511, F-35042 Rennes, France Univ Mohamed Ben Abdellah, Fac Sci & Tech Saiss, Fes, Morocco Univ MohamedBen Abdellah Fes Morocco ac Sci & Tech Saiss, Fes, Morocco Thomson CSF, Cent Rech Lab, F-91404 Orsay, France Thomson CSF Orsay France F-91404 F, Cent Rech Lab, F-91404 Orsay, France
Titolo Testata:
THIN SOLID FILMS
fascicolo: 1-2, volume: 352, anno: 1999,
pagine: 66 - 72
SICI:
0040-6090(19990908)352:1-2<66:HGOPTF>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; EPITAXIAL-GROWTH; PB(ZR,TI)O-3 CERAMICS; ELECTRICAL-PROPERTIES; CAPACITORS; MEMORY; HETEROSTRUCTURES; ELECTRODE; ABLATION; FATIGUE;
Keywords:
pulsed laser deposition; lead zirconate titanate (PZT); epitaxial growth; thin films; optical measurements;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
31
Recensione:
Indirizzi per estratti:
Indirizzo: Guilloux-Viry, M Univ Rennes 1, Chim Solide & Inorgan Mol Lab, CNRS, UMR 6511, Ave Gen Leclerc, F-35042 Rennes, France Univ Rennes 1 Ave Gen Leclerc Rennes France F-35042 ance
Citazione:
L.H. Hamedi et al., "Heteroepitaxial growth of PZT thin films on LiF substrate by pulsed laser deposition", THIN SOL FI, 352(1-2), 1999, pp. 66-72

Abstract

Thin films of PbZr0.52Ti0.48O3 (PZT) have been epitaxially grown in situ by pulsed laser deposition on (100)LiF single crystal substrates in view of optical applications, expected from the large difference between the refractive indices of PZT (similar to 2.5) and LiF (1.4). High crystalline quality (001) oriented thin films have been obtained for a deposition temperatureranging in a narrow window (490-510 degrees C), as shown by Xrays diffraction experiments performed in theta-2 theta, theta-scan and phi-scan modes as well as by reflection high energy electron diffraction (RHEED). As well as the structural characteristics, the refractive index (at 632.8 nm) correlates strongly with the deposition temperature. Corresponding to the best epitaxial quality, the highest value of the refractive index, similar to 2.3,has been obtained. Although this value is lower than the one of the bulk material, the difference with LiF refractive index is quite enough in order to expect optical applications. (C) 1999 Elsevier Science S.A. All rights reserved.

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Documento generato il 01/10/20 alle ore 01:22:03