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Titolo:
Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters
Autore:
Williams, JS; Chen, Y; Wong-Leung, J; Kerr, A; Swain, MV;
Indirizzi:
Australian Natl Univ, RSPhysSE, Dept Elect Mat Engn, Canberra, ACT 0200, Australia Australian Natl Univ Canberra ACT Australia 0200 rra, ACT 0200, Australia CSIRO, Div Telecommun & Ind Phys, Lindfield, NSW 2070, Australia CSIRO Lindfield NSW Australia 2070 d Phys, Lindfield, NSW 2070, Australia
Titolo Testata:
JOURNAL OF MATERIALS RESEARCH
fascicolo: 6, volume: 14, anno: 1999,
pagine: 2338 - 2343
SICI:
0884-2914(199906)14:6<2338:UOSACS>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
PHASE-TRANSFORMATIONS; BEHAVIOR; FRACTURE; MICROINDENTATION; CRYSTALLINE; HYSTERESIS; HARDNESS; FILMS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
26
Recensione:
Indirizzi per estratti:
Indirizzo: Williams, JS Australian Natl Univ, RSPhysSE, Dept Elect Mat Engn, Canberra, ACT 0200, Australia Australian Natl Univ Canberra ACT Australia 0200 , Australia
Citazione:
J.S. Williams et al., "Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters", J MATER RES, 14(6), 1999, pp. 2338-2343

Abstract

Details of microindentation of silicon, such as the semiconductor-to-metaltransformation, which takes place on loading, have been examined using spherical indenters. Various forms of silicon are studied, including heavily boron-doped wafers and silicon damaged and amorphized by ion implantation aswell as material containing dislocations. Results indicate that only silicon, which contains high concentrations of point defects or is amorphous, exhibits mechanical properties that differ significantly from undoped, defect-free crystal. Amorphous silicon exhibits plastic flow under low indentation pressures and does not appear to undergo phase transformation on loading and unloading. Indentation of compound semiconductors is also studied and the load/unload behavior at room temperature is quite difficult ent from that of silicon. Both gallium arsenide and indium phosphide, for example, undergo slip-induced plasticity above a critical load.

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Documento generato il 23/10/20 alle ore 11:51:47