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Titolo:
SnO2 thin films prepared by ion beam induced CVD. Preparation and characterization
Autore:
Jimenez, VM; Espinos, JP; Gonzalez-Elipe, AR; Caballero, A; Yubero, F;
Indirizzi:
Univ Sevilla, CSIC, Inst Ciencia Mat, Seville 41092, Spain Univ Sevilla Seville Spain 41092 Inst Ciencia Mat, Seville 41092, Spain Dept Quim Inorgan, Seville 41092, Spain Dept Quim Inorgan Seville Spain 41092 Quim Inorgan, Seville 41092, Spain
Titolo Testata:
JOURNAL DE PHYSIQUE IV
fascicolo: P8, volume: 9, anno: 1999,
parte:, 2
pagine: 749 - 755
SICI:
1155-4339(199909)9:P8<749:STFPBI>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
OPTICAL-PROPERTIES; OXIDE-FILMS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
17
Recensione:
Indirizzi per estratti:
Indirizzo: Jimenez, VM Univ Sevilla, CSIC, Inst Ciencia Mat, Seville 41092, Spain Univ Sevilla Seville Spain 41092 a Mat, Seville 41092, Spain
Citazione:
V.M. Jimenez et al., "SnO2 thin films prepared by ion beam induced CVD. Preparation and characterization", J PHYS IV, 9(P8), 1999, pp. 749-755

Abstract

Tin dioxide thin films have been prepared by Ion Beam Induced Chemical Vapour Deposition [IBICVD]. The films, with a SnO2 stoichiometry as determinedby XPS, are compact and homogeneous as revealed by SEM/TEM. Preparation was carried out on different substrates at 300 K [i.e. room temperature] or 673 K. Small differences were detected in the granular structure at these two different temperatures. In the two cases the films were partially crystalline;and depicted the cassiterite structure of SnO2. Small crystallographicdomains between 30 and 50 A and a preferential growth of certain planes are deduced from the analysis of the X-ray diagrams. The W-vis spectra are characterised by a oscillatory absorption behaviour typical of thin films deposited on a transparent substrate with a different refraction index. The value of this optical parameter at lambda = 420 (+)(-) 20 for films with d greater than or equal to 2000 Angstrom was about 1.9, very close to the valueof bulk SnO2. A selective deposition of the SnO2 films has been also intended by using a mask between the accelerated ion beam used by IBICVD and thesubstrate.

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Documento generato il 28/11/20 alle ore 21:34:14