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Titolo:
Chemically deposited copper oxide thin films: structural, optical and electrical characteristics
Autore:
Nair, MTS; Guerrero, L; Arenas, OL; Nair, PK;
Indirizzi:
Univ Nacl Autonoma Mexico, Ctr Invest Energia, Dept Solar Energy Mat, Temixco 62580, Morelos, Mexico Univ Nacl Autonoma Mexico Temixco Morelos Mexico 62580 0, Morelos, Mexico
Titolo Testata:
APPLIED SURFACE SCIENCE
fascicolo: 1-4, volume: 150, anno: 1999,
pagine: 143 - 151
SICI:
0169-4332(199908)150:1-4<143:CDCOTF>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
IONIC-LAYER ADSORPTION; CU2O; GROWTH; ZNS; CDS;
Keywords:
thin film; copper oxide; chemical deposition;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
24
Recensione:
Indirizzi per estratti:
Indirizzo: Nair, MTS Univ Nacl Autonoma Mexico, Ctr Invest Energia, Dept Solar EnergyMat, Temixco 62580, Morelos, Mexico Univ Nacl Autonoma Mexico Temixco Morelos Mexico 62580 , Mexico
Citazione:
M.T.S. Nair et al., "Chemically deposited copper oxide thin films: structural, optical and electrical characteristics", APPL SURF S, 150(1-4), 1999, pp. 143-151

Abstract

Thin films of copper oxide with thickness ranging from 0.05-0.45 mu m weredeposited on microscope glass slides by successively dipping them for 20 seach in a solution of 1 M NaOH and then in a solution of copper complex. Temperature of the NaOH solution was varied from 50-90 degrees C, while thatof the copper solution was maintained at room temperature. X-ray diffraction patterns showed that the films, as prepared, are of cuprite structure with composition Cu2O. Annealing the films in air at 350 degrees C converts these films to CuO. This conversion is accompanied by a shift in the opticalband gap from 2.1 eV (direct) to 1.75 eV (direct). The films show p-type conductivity, similar to 5 X 10(-4) Omega(-1) cm(-1)for a film of thickness 0.15 mu m. Electrical conductivity of this film increases by a factor of 3 when illuminated with 1 kW m(-2) tungsten halogen radiation. Annealing in anitrogen atmosphere at temperatures up to 400 degrees C does not change the composition of the films. However, the conductivity in the dark as well as the photoconductivity of the film increases by an order of magnitude. Theelectrical conductivity of the CuO thin films produced by air annealing at400 degrees C, is high, 7 X 10(-3) Omega(-1) cm(-1). These films are also photoconductive. (C) 1999 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 12/07/20 alle ore 06:22:44