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Titolo:
Precise control of 1.55 mu m vertical-cavity surface-emitting laser structure with InAlGaAs/InAlAs Bragg reflectors by in situ growth monitoring
Autore:
Baek, JH; Choi, IH; Lee, B; Han, WS; Cho, HK;
Indirizzi:
Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea Korea Univ Seoul South Korea 136701 ci & Engn, Seoul 136701, South Korea Elect & Telecommun Res Inst, Taejon 305600, South Korea Elect & TelecommunRes Inst Taejon South Korea 305600 05600, South Korea
Titolo Testata:
APPLIED PHYSICS LETTERS
fascicolo: 11, volume: 75, anno: 1999,
pagine: 1500 - 1502
SICI:
0003-6951(19990913)75:11<1500:PCO1MM>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; INP; WAVELENGTH; 1.55-MU-M; EPILAYERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
17
Recensione:
Indirizzi per estratti:
Indirizzo: Baek, JH Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea Korea Univ Seoul South Korea 136701 , Seoul 136701, South Korea
Citazione:
J.H. Baek et al., "Precise control of 1.55 mu m vertical-cavity surface-emitting laser structure with InAlGaAs/InAlAs Bragg reflectors by in situ growth monitoring", APPL PHYS L, 75(11), 1999, pp. 1500-1502

Abstract

The vertical-cavity surface-emitting laser (VCSEL) structure designed at 1.55 mu m was grown by a low-pressure metalorganic chemical vapor depositionmethod. In situ laser reflectometry, using both 0.633 and 1.53 mu m wavelengths simultaneously, was employed to control the exact optical thickness over the whole growth time. The distributed Bragg reflectors (DBRs) were grown with alternate In0.53Al0.13Ga0.34As and In0.52Al0.48As lambda/4 wavelength layers. The oscillatory reflection signals obtained by the monitoring laser at 1.53 mu m gave information for designing the center wavelength of the DBR. The reflectance spectrum of the VCSEL structure showed an excellent square shaped wide flatband (greater than 90 nm) where the reflectivity reached a plateau as expected by the in situ monitoring data. (C) 1999 American Institute of Physics. [S0003-6951(99)02837-5].

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Documento generato il 26/11/20 alle ore 08:19:15