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Titolo:
Formation of ordered nanoscale semiconductor dots by ion sputtering
Autore:
Facsko, S; Dekorsy, T; Koerdt, C; Trappe, C; Kurz, H; Vogt, A; Hartnagel, HL;
Indirizzi:
Rhein Westfal TH Aachen, Inst Semicond Elect, D-52074 Aachen, Germany Rhein Westfal TH Aachen Aachen Germany D-52074 , D-52074 Aachen, Germany TU Darmstadt, Inst Hochfrequenztech, D-64283 Darmstadt, Germany TU Darmstadt Darmstadt Germany D-64283 ztech, D-64283 Darmstadt, Germany
Titolo Testata:
SCIENCE
fascicolo: 5433, volume: 285, anno: 1999,
pagine: 1551 - 1553
SICI:
0036-8075(19990903)285:5433<1551:FOONSD>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
ROUGHENING INSTABILITY; RIPPLE FORMATION; SURFACES; TOPOGRAPHY; EVOLUTION; EROSION; GROWTH;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Agriculture,Biology & Environmental Sciences
Life Sciences
Physical, Chemical & Earth Sciences
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Facsko, S Rhein Westfal TH Aachen, Inst Semicond Elect, Sommerfeldstr 24, D-52074 Aachen, Germany Rhein Westfal TH Aachen Sommerfeldstr 24 Aachen Germany D-52074
Citazione:
S. Facsko et al., "Formation of ordered nanoscale semiconductor dots by ion sputtering", SCIENCE, 285(5433), 1999, pp. 1551-1553

Abstract

A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal Lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, which is based on the interplay between roughening induced by ion sputtering and smoothing due to surface diffusion.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 03/12/20 alle ore 06:09:12