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Titolo:
A PIC-MC simulation of the effect of frequency on the characteristics of VHFSiH4/H-2 discharges
Autore:
Yan, M; Goedheer, WJ;
Indirizzi:
FOM, Inst Plasma Phys Rijnhuizen, NL-3420 BE Nieuwegein, Netherlands FOM Nieuwegein Netherlands NL-3420 BE NL-3420 BE Nieuwegein, Netherlands
Titolo Testata:
PLASMA SOURCES SCIENCE & TECHNOLOGY
fascicolo: 3, volume: 8, anno: 1999,
pagine: 349 - 354
SICI:
0963-0252(199908)8:3<349:APSOTE>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL VAPOR-DEPOSITION; IONIZATION CROSS-SECTIONS; THIN-FILM DEPOSITION; SI-H DEPOSITION; RADIOFREQUENCY DISCHARGES; EXCITATION-FREQUENCY; AMORPHOUS-SILICON; ELECTRON-IMPACT; SILANE; PLASMA;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
31
Recensione:
Indirizzi per estratti:
Indirizzo: Yan, M FOM, Inst Plasma Phys Rijnhuizen, POB 1207, NL-3420 BE Nieuwegein, Netherlands FOM POB 1207 Nieuwegein Netherlands NL-3420 BE wegein, Netherlands
Citazione:
M. Yan e W.J. Goedheer, "A PIC-MC simulation of the effect of frequency on the characteristics of VHFSiH4/H-2 discharges", PLASMA SOUR, 8(3), 1999, pp. 349-354

Abstract

A 2D particle -in-cell and Monte Carlo code has been developed to study the behaviour of VHF discharges in a mixture of SiH4/H-2 at pressures below 300 mTorr and frequencies from 13.56 to 65 MHz. The aim of our study is to explain the increase of the deposition rate of thin amorphous films with theapplied frequency which has been observed in various experiments. The frequency dependence of the electron energy distribution in the discharge area,the energy distribution of the ion fluxes to the substrate and the power dissipation are investigated at a constant power density. The experimentallyobserved increase of the deposition rate is explained by the fact that more ions are in an energy range which effectively influences the deposition process.

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Documento generato il 06/07/20 alle ore 05:57:02